SPB80N10L G
- Manufacturer's Part No.:SPB80N10L G
- Manufacturer:
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- Series:SIPMOS®
- Description:MOSFET N-CH 100V 80A TO-263
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- In Stock: 3589
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- Available: 3589
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.SPB80N10L G
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesSIPMOS®
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Part StatusDiscontinued
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Surface MountYES
- Number of Terminations2
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Reach Compliance Codeunknown
- Pin Count4
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Published2002
- Additional FeatureAVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max250W Tc
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)80A
- Drain-source On Resistance-Max0.024Ohm
- Pulsed Drain Current-Max (IDM)320A
- DS Breakdown Voltage-Min100V
- Avalanche Energy Rating (Eas)700 mJ
- Drain to Source Voltage (Vdss)100V
- FET TypeN-Channel
- Vgs(th) (Max) @ Id2V @ 2mA
- Input Capacitance (Ciss) (Max) @ Vds4540pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs240nC @ 10V
- Vgs (Max)±20V
- Current - Continuous Drain (Id) @ 25°C80A Tc
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Rds On (Max) @ Id, Vgs14m Ω @ 58A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
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