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SPU11N10
- Manufacturer's Part No.:SPU11N10
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:SIPMOS®
- Description:MOSFET N-CH 100V 10.5A IPAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 3656
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- Available: 3656
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Product Parameter
- ManufacturerInfineon Technologies
- Manufacturer's Part No.SPU11N10
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesSIPMOS®
- ECCNEAR99
- MountThrough Hole
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count3
- Published2002
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusObsolete
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeThrough Hole
- Current Rating10.5A
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
- Terminal FinishMATTE TIN
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Vgs(th) (Max) @ Id4V @ 21μA
- Voltage - Rated DC100V
- Qualification StatusNot Qualified
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max50W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs170m Ω @ 7.8A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)NOT SPECIFIED
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs18.3nC @ 10V
- Avalanche Energy Rating (Eas)60 mJ
- Continuous Drain Current (ID)10.5A
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max0.17Ohm
- Pulsed Drain Current-Max (IDM)41.2A
- Input Capacitance (Ciss) (Max) @ Vds400pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C10.5A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusRoHS Compliant
- JESD-30 CodeR-PSIP-T3
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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