SQ3419AEEV-T1_BE3
- Manufacturer's Part No.:SQ3419AEEV-T1_BE3
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- Description:P-CHANNEL 40-V (D-S) 175C MOSFET
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- In Stock: 29242
- Available: 55221
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $3.80000 | US $3.80 |
10+ | US $3.42000 | US $34.20 |
30+ | US $2.66000 | US $79.80 |
100+ | US $2.18500 | US $218.50 |
500+ | US $2.09000 | US $1045.00 |
1000+ | US $1.90000 | US $1900.00 |
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- Description
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- Shopping Guide
The SQ3419AEEV-T1_BE3 is a specific component manufactured by Vishay, a well-known company in the field of electronic components. This part is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), which is widely used in various electronic applications for switching and amplification purposes.
Detailed Description:
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Type and Functionality:
- The SQ3419AEEV-T1_BE3 is an N-channel MOSFET, which means it is designed to conduct when a positive voltage is applied to its gate terminal relative to its source terminal. This characteristic makes it suitable for high-speed switching applications.
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Package Type:
- This MOSFET is typically housed in a TO-220 package, which is a common type of package for power transistors. The TO-220 package allows for efficient heat dissipation, making it ideal for applications that require handling significant power levels.
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Electrical Specifications:
- Drain-Source Voltage (V_DS): The SQ3419AEEV-T1_BE3 can handle a maximum drain-source voltage, which is crucial for determining the voltage levels it can operate under without breaking down.
- Continuous Drain Current (I_D): This parameter indicates the maximum current the MOSFET can carry continuously without overheating. It is essential for ensuring that the device operates within safe limits in a circuit.
- Gate Threshold Voltage (V_GS(th)): This is the minimum gate-to-source voltage required to turn the MOSFET on. It is a critical specification for designing circuits that utilize this component.
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Thermal Characteristics:
- The device has a specified thermal resistance, which indicates how effectively it can dissipate heat. This is important for maintaining performance and reliability in high-power applications.
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Switching Characteristics:
- The SQ3419AEEV-T1_BE3 is designed for fast switching speeds, making it suitable for applications such as power management, motor control, and DC-DC converters. Its rise and fall times are optimized for efficient operation in high-frequency circuits.
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Applications:
- This MOSFET is commonly used in power supplies, automotive applications, and various consumer electronics. Its ability to handle high currents and voltages makes it versatile for different circuit designs.
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Environmental and Reliability Features:
- Vishay typically designs its components to meet various industry standards for reliability and environmental resistance. The SQ3419AEEV-T1_BE3 may be compliant with RoHS (Restriction of Hazardous Substances) regulations, ensuring it is environmentally friendly.
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Marking and Identification:
- The part number SQ3419AEEV-T1_BE3 is usually printed on the body of the MOSFET, along with other relevant markings that may indicate the manufacturing date or batch number.
In summary, the SQ3419AEEV-T1_BE3 from Vishay is a robust N-channel MOSFET designed for high-performance applications, characterized by its efficient switching capabilities, thermal management features, and suitability for a wide range of electronic devices.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
SHIPPING GUIDE
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