SQ4425EY-T1_GE3
- Manufacturer's Part No.:SQ4425EY-T1_GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:Automotive, AEC-Q101, TrenchFET®
- Description:MOSFET P-CHANNEL 30V 18A 8SOIC
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 100
- Available: 2500
- Updated: 1 Day 20 HRS ago
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.10120 | US $2.10 |
10+ | US $1.89108 | US $18.91 |
30+ | US $1.47084 | US $44.13 |
100+ | US $1.20819 | US $120.82 |
500+ | US $1.15566 | US $577.83 |
1000+ | US $1.05060 | US $1050.60 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SQ4425EY-T1_GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesAutomotive, AEC-Q101, TrenchFET®
- ECCNEAR99
- MountSurface Mount
- FET TypeP-Channel
- PackagingTape & Reel (TR)
- Rise Time9ns
- Vgs (Max)±20V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Number of Pins8
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)13 ns
- Factory Lead Time12 Weeks
- Power Dissipation6.8W
- Number of Elements1
- Turn On Delay Time12 ns
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time54 ns
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max6.8W Tc
- Rds On (Max) @ Id, Vgs12mOhm @ 13A, 10V
- Supplier Device Package8-SOIC
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Gate Charge (Qg) (Max) @ Vgs50nC @ 4.5V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)18A
- Drain to Source Voltage (Vdss)30V
- Input Capacitance (Ciss) (Max) @ Vds3630pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Current - Continuous Drain (Id) @ 25°C18A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- RoHS StatusRoHS non-compliant
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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