SQ4946EY-T1-E3
- Manufacturer's Part No.:SQ4946EY-T1-E3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:TrenchFET®
- Description:MOSFET 2N-CH 60V 4.5A 8SOIC
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Available: 11528
Reference Price(In US Dollars)
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Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SQ4946EY-T1-E3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesTrenchFET®
- Time@Peak Reflow Temperature-Max (s)40
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Rise Time11ns
- Part StatusObsolete
- Operating Temperature-55°C~175°C TJ
- MountSurface Mount
- Number of Pins8
- PackagingTape & Reel (TR)
- SubcategoryFET General Purpose Power
- Number of Terminations8
- Terminal FinishMATTE TIN
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codeunknown
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements2
- Published2009
- Pbfree Codeyes
- Height1.55mm
- Length5mm
- Width4mm
- Weight186.993455mg
- Max Power Dissipation1.7W
- Power - Max2.4W
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Transistor ApplicationSWITCHING
- Power Dissipation1.7W
- Number of Channels2
- Turn On Delay Time13 ns
- Turn-Off Delay Time36 ns
- Operating ModeENHANCEMENT MODE
- Drain-source On Resistance-Max0.055Ohm
- Pulsed Drain Current-Max (IDM)30A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss)60V
- Continuous Drain Current (ID)4.5A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- FET Type2 N-Channel (Dual)
- Vgs(th) (Max) @ Id3V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs30nC @ 10V
- FET FeatureLogic Level Gate
- Fall Time (Typ)11 ns
- Rds On (Max) @ Id, Vgs55m Ω @ 4.5A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
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