SQJ431EP-T1_GE3
- Manufacturer's Part No.:SQJ431EP-T1_GE3
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- Series:Automotive, AEC-Q101, TrenchFET®
- Description:MOSFET P-CHAN 200V SO8L
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- Quantity:Buy NowAdd to Cart
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- In Stock: 18600
- Available: 91564
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.04600 | US $2.05 |
10+ | US $1.84140 | US $18.41 |
30+ | US $1.43220 | US $42.97 |
100+ | US $1.17645 | US $117.65 |
500+ | US $1.12530 | US $562.65 |
1000+ | US $1.02300 | US $1023.00 |
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- Description
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- Shopping Guide
The SQJ431EP-T1_GE3 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay, designed for a variety of applications including power management, switching, and amplification.
Key Features:
- Type: N-channel MOSFET
- Package: The device typically comes in a TO-220 package, which is a standard for power devices, providing good thermal performance and ease of mounting.
- Voltage Rating: The SQJ431EP-T1_GE3 has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
- Current Rating: It can handle a continuous drain current (I_D) of up to 60A, which allows it to manage significant power loads effectively.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is relatively low, allowing for easy drive with standard logic levels.
- Switching Speed: The device is designed for fast switching applications, making it suitable for high-frequency operations.
- Thermal Resistance: The TO-220 package provides good thermal dissipation characteristics, with a low thermal resistance junction-to-case (RθJC), which is crucial for maintaining performance under high load conditions.
Applications:
- Power Supply Circuits: Ideal for use in DC-DC converters, power management systems, and battery management systems.
- Motor Control: Suitable for driving motors in various applications, including automotive and industrial settings.
- Load Switching: Can be used for switching loads in consumer electronics and other devices requiring efficient power control.
Additional Information:
- RoHS Compliance: The SQJ431EP-T1_GE3 is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it an environmentally friendly choice.
- Reliability: Vishay is known for its high-quality semiconductor products, and this MOSFET is designed to meet stringent reliability standards.
Conclusion:
The SQJ431EP-T1_GE3 from Vishay is a robust and efficient N-channel MOSFET that offers excellent performance for a wide range of applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a preferred choice for engineers looking to optimize power management solutions.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
SHIPPING GUIDE
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