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SQJA84EP-T1_GE3

  • In Stock: 160160
  • Available: 178202

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $40.00000US $40.00
10+US $30.00000US $300.00
30+US $26.00000US $780.00
100+US $23.00000US $2300.00
500+US $21.60000US $10800.00
1000+US $20.00000US $20000.00

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  • Description
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Description

The SQJA84EP-T1_GE3 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay, designed for a variety of applications including power management, switching, and amplification in electronic circuits.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: Typically available in a TO-220 package, which provides excellent thermal performance and ease of mounting on heatsinks.
  3. Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of around 40V, making it suitable for low to medium voltage applications.
  4. Current Rating: It can handle a continuous drain current (I_D) of up to 80A, depending on the thermal conditions and the specific application.
  5. R_DS(on): The on-resistance (R_DS(on)) is low, typically in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency.
  6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is relatively low, allowing for easy drive with standard logic levels.
  7. Switching Speed: The SQJA84EP-T1_GE3 features fast switching capabilities, making it ideal for high-frequency applications.
  8. Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, which helps in effective heat dissipation and allows for higher power handling without overheating.

Applications:

  • Power Supply Circuits: Used in DC-DC converters, power management systems, and battery management systems.
  • Motor Control: Suitable for driving motors in various applications, including robotics and industrial automation.
  • Lighting Control: Can be used in LED drivers and lighting control systems.
  • Audio Amplifiers: Employed in audio amplification circuits for improved performance.

Electrical Characteristics:

  • Maximum Gate-Source Voltage (V_GS): Typically rated at ±20V, ensuring safe operation within specified limits.
  • Body Diode: The MOSFET includes an intrinsic body diode, which allows for reverse current flow and can be beneficial in certain applications.

Reliability and Compliance:

The SQJA84EP-T1_GE3 is designed to meet stringent reliability standards and is compliant with RoHS (Restriction of Hazardous Substances) regulations, making it an environmentally friendly choice for modern electronic designs.

Conclusion:

The SQJA84EP-T1_GE3 from Vishay is a robust and efficient N-channel MOSFET that offers excellent performance for a wide range of applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a preferred choice for engineers looking to optimize their designs for efficiency and reliability.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

SHIPPING GUIDE

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