SQJB00EP-T1_GE3
- Manufacturer's Part No.:SQJB00EP-T1_GE3
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:Automotive, AEC-Q101, TrenchFET®
- Description:MOSFET 2 N-CH 60V POWERPAK SO8
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- Delivery:
- In Stock: 81000
- Available: 164478
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $3.40000 | US $3.40 |
10+ | US $3.06000 | US $30.60 |
30+ | US $2.38000 | US $71.40 |
100+ | US $1.95500 | US $195.50 |
500+ | US $1.87000 | US $935.00 |
1000+ | US $1.70000 | US $1700.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerVishay
- Manufacturer's Part No.SQJB00EP-T1_GE3
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesAutomotive, AEC-Q101, TrenchFET®
- Package / CasePowerPAK® SO-8 Dual
- Part StatusActive
- Operating Temperature-55°C~175°C TJ
- Factory Lead Time14 Weeks
- PackagingTape & Reel (TR)
- Surface MountYES
- Number of Terminations4
- Terminal PositionSINGLE
- Terminal FormGULL WING
- Reach Compliance Codeunknown
- Number of Elements2
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Case ConnectionDRAIN
- Power - Max48W
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)25A
- Drain-source On Resistance-Max0.013Ohm
- Pulsed Drain Current-Max (IDM)84A
- DS Breakdown Voltage-Min60V
- Avalanche Energy Rating (Eas)26.5 mJ
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss)60V
- FET Type2 N-Channel (Dual)
- Vgs(th) (Max) @ Id3.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1700pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
- FET FeatureStandard
- Current - Continuous Drain (Id) @ 25°C30A Tc
- Rds On (Max) @ Id, Vgs13m Ω @ 10A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G4
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