SSM3J331R,LF

The SSM3J331R,LF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba. This component is designed for various applications in power management and switching circuits, making it a versatile choice for engineers and designers in the electronics field.

Key Features:

1. Type: N-channel MOSFET

   • The N-channel configuration allows for efficient switching and amplification of electrical signals.

2. Voltage Rating:

   • The SSM3J331R,LF typically has a maximum drain-source voltage (V_DS) rating of around 30V. This makes it suitable for low to medium voltage applications.

3. Current Rating:

   • It can handle a continuous drain current (I_D) of approximately 3.5A, which is adequate for many consumer electronics and power supply applications.

4. On-Resistance (R_DS(on)):

   • The on-resistance is low, typically around 0.1 ohms at a gate-source voltage (V_GS) of 10V. This low R_DS(on) value contributes to reduced power loss and improved efficiency during operation.

5. Gate Threshold Voltage (V_GS(th)):

   • The gate threshold voltage is usually in the range of 1V to 3V, allowing for easy drive with standard logic levels.

6. Package Type:

   • The SSM3J331R,LF is available in a compact SOT-23 package, which is ideal for space-constrained applications. The small footprint helps in reducing the overall size of the circuit board.

7. Operating Temperature Range:

   • It can operate effectively over a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.

8. Applications:

   • This MOSFET is commonly used in power management circuits, DC-DC converters, load switching, and other applications where efficient switching is required.

9. RoHS Compliance:

   • The "LF" in the part number indicates that it is lead-free, complying with RoHS (Restriction of Hazardous Substances) standards, which is essential for environmentally friendly designs.

Summary:

The SSM3J331R,LF from Toshiba is a reliable and efficient N-channel MOSFET that offers low on-resistance, moderate voltage and current ratings, and a compact package. Its features make it suitable for a wide range of applications in consumer electronics, power supplies, and other electronic devices where efficient switching and power management are critical.