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SSM3K333R,LF

  • In Stock: 11180
  • Available: 12000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $0.09174US $0.09
10+US $0.06116US $0.61
30+US $0.04587US $1.38
100+US $0.03670US $3.67
500+US $0.03364US $16.82
1000+US $0.03058US $30.58

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  • Description
  • Alternatives
  • Shopping Guide
Description

The SSM3K333R,LF is a compact N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba. This device is designed for low-voltage applications and is particularly well-suited for power management and switching applications in consumer electronics, automotive systems, and industrial equipment.

Key Features:

  1. Type: N-channel MOSFET
  2. Package: The SSM3K333R,LF typically comes in a small surface-mount package, such as the SOT-23, which allows for efficient use of space on printed circuit boards (PCBs).
  3. Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to moderate voltage applications.
  4. Current Rating: It can handle a continuous drain current (I_D) of approximately 3.5A, which is adequate for many low-power applications.
  5. R_DS(on): The on-resistance (R_DS(on)) is low, typically in the range of a few milliohms, which minimizes power loss and heat generation during operation.
  6. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is relatively low, allowing for easy drive with standard logic levels.
  7. Switching Speed: The SSM3K333R,LF features fast switching capabilities, making it ideal for high-frequency applications.

Applications:

  • Power Management: Used in DC-DC converters, battery management systems, and power supply circuits.
  • Load Switching: Suitable for switching loads in various electronic devices, including LED drivers and motor control circuits.
  • Signal Switching: Can be employed in signal routing applications where low on-resistance and fast switching are critical.

Electrical Characteristics:

  • Maximum Gate-Source Voltage (V_GS): Typically rated at ±20V, ensuring safe operation within specified limits.
  • Thermal Resistance: The device has a low thermal resistance, allowing for efficient heat dissipation during operation.

Environmental Considerations:

  • RoHS Compliance: The SSM3K333R,LF is compliant with RoHS (Restriction of Hazardous Substances) regulations, making it suitable for environmentally friendly applications.

Conclusion:

The SSM3K333R,LF from Toshiba is a versatile and efficient N-channel MOSFET that offers excellent performance for a variety of low-voltage applications. Its compact size, low on-resistance, and fast switching capabilities make it a popular choice among engineers and designers looking to optimize their electronic circuits.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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