SSM6J501NU,LF
- Manufacturer's Part No.:SSM6J501NU,LF
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- Series:U-MOSVI
- Description:P-Channel 20V 10A 1V @ 1mA 15.3mΩ @ 4A,4.5V 1W UDFN6B MOSFET RoHS
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- In Stock: 50000
- Available: 2876
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.18000 | US $0.18 |
10+ | US $0.12000 | US $1.20 |
30+ | US $0.09000 | US $2.70 |
100+ | US $0.07200 | US $7.20 |
500+ | US $0.06600 | US $33.00 |
1000+ | US $0.06000 | US $60.00 |
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- Description
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- Shopping Guide
The SSM6J501NU,LF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba. This component is designed for various applications in power management and switching circuits, making it a versatile choice for engineers and designers in the electronics field.
Key Features:
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Type: N-channel MOSFET
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Package: The SSM6J501NU,LF is typically housed in a compact surface-mount package, which allows for efficient use of space on printed circuit boards (PCBs). The specific package type is often a SOT-23 or similar, which is favored for its small footprint and ease of integration into modern electronic designs.
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Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating, typically around 30V, making it suitable for low to medium voltage applications.
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Current Rating: It can handle a continuous drain current (I_D) of up to approximately 6A, depending on the thermal conditions and PCB layout, which allows it to be used in applications requiring significant power handling.
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R_DS(on): The on-resistance (R_DS(on)) is low, often in the range of a few milliohms, which minimizes power loss during operation and enhances efficiency, particularly in switching applications.
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Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically low, allowing for easy drive with standard logic levels, which is beneficial for interfacing with microcontrollers and other digital logic devices.
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Switching Speed: The SSM6J501NU,LF is designed for fast switching, making it suitable for high-frequency applications, such as DC-DC converters and motor drivers.
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Thermal Characteristics: The device has good thermal performance, with a specified maximum junction temperature (T_J) that allows it to operate reliably in various environmental conditions.
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Applications: Common applications include power management circuits, battery management systems, load switches, and other general-purpose switching applications in consumer electronics, automotive, and industrial equipment.
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RoHS Compliance: The "LF" in the part number indicates that the device is lead-free, complying with RoHS (Restriction of Hazardous Substances) standards, which is important for environmentally conscious manufacturing practices.
Summary:
The SSM6J501NU,LF from Toshiba is a robust and efficient N-channel MOSFET that offers a combination of low on-resistance, high current handling capability, and fast switching speeds. Its compact package and compliance with modern environmental standards make it an excellent choice for a wide range of electronic applications, particularly in power management and control circuits.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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