STB55NF06T4
- Manufacturer's Part No.:STB55NF06T4
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:STripFET™ II
- Description:MOSFET N-CH 60V 50A D2PAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 30246
- Available: 102702
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.45694 | US $1.46 |
10+ | US $0.97129 | US $9.71 |
30+ | US $0.72847 | US $21.85 |
100+ | US $0.58277 | US $58.28 |
500+ | US $0.53421 | US $267.10 |
1000+ | US $0.48564 | US $485.64 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerSTMicroelectronics
- Manufacturer's Part No.STB55NF06T4
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesSTripFET™ II
- ECCNEAR99
- MountSurface Mount
- Width9.35mm
- Height4.6mm
- Length10.4mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count3
- Rise Time50ns
- Vgs (Max)±20V
- Resistance18mOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating50A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time (Typ)15 ns
- Terminal FinishMatte Tin (Sn) - annealed
- Base Part NumberSTB55N
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time12 Weeks
- Power Dissipation110W
- Threshold Voltage3V
- Number of Elements1
- Turn On Delay Time20 ns
- Vgs(th) (Max) @ Id4V @ 250μA
- Voltage - Rated DC60V
- Radiation HardeningNo
- Turn-Off Delay Time36 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~175°C TJ
- Power Dissipation-Max110W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs18m Ω @ 27.5A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
- Gate to Source Voltage (Vgs)20V
- Continuous Drain Current (ID)27.5A
- Peak Reflow Temperature (Cel)245
- Pulsed Drain Current-Max (IDM)200A
- Drain to Source Breakdown Voltage60V
- Input Capacitance (Ciss) (Max) @ Vds1300pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C50A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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