STB6NK90ZT4
- Manufacturer's Part No.:STB6NK90ZT4
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- Series:SuperMESH™
- Description:MOSFET N-CH 900V 5.8A D2PAK
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- Quantity:Buy NowAdd to Cart
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- In Stock: 2000
- Available: 3000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.04120 | US $2.04 |
10+ | US $1.36080 | US $13.61 |
30+ | US $1.02060 | US $30.62 |
100+ | US $0.81648 | US $81.65 |
500+ | US $0.74844 | US $374.22 |
1000+ | US $0.68040 | US $680.40 |
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- Description
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- Shopping Guide
The STB6NK90ZT4 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in various applications, including power management, motor control, and switching applications, where efficiency and thermal performance are critical.
Key Features:
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Voltage Rating: The STB6NK90ZT4 has a maximum drain-source voltage (V_DS) of 900V, making it suitable for high-voltage applications.
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Current Rating: It can handle a continuous drain current (I_D) of up to 6A at a specified temperature, which allows it to manage significant power loads.
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R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.8 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation, enhancing overall efficiency.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which allows for easy driving with standard logic levels.
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Package Type: The device is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.
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Thermal Characteristics: The STB6NK90ZT4 has a maximum junction temperature (T_j) of 150°C, allowing it to operate in demanding thermal environments.
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Fast Switching: The MOSFET is designed for fast switching applications, which is beneficial in reducing switching losses in high-frequency circuits.
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Applications: Common applications include power supplies, converters, inverters, and motor drivers, where high efficiency and reliability are essential.
Electrical Characteristics:
- V_DS (Max): 900V
- I_D (Max): 6A
- R_DS(on): 0.8Ω (typical at V_GS = 10V)
- V_GS(th): 2V to 4V
- T_j (Max): 150°C
Conclusion:
The STB6NK90ZT4 is a robust and efficient N-channel MOSFET suitable for a wide range of high-voltage applications. Its combination of high voltage rating, low on-resistance, and fast switching capabilities makes it an excellent choice for engineers looking to optimize power management and control in their designs.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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