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STD16N65M5

  • In Stock: 5400
  • Available: 37147

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.34400US $3.34
10+US $3.00960US $30.10
30+US $2.34080US $70.22
100+US $1.92280US $192.28
500+US $1.83920US $919.60
1000+US $1.67200US $1672.00

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Product Parameter

  • Manufacturer
    STMicroelectronics
  • Manufacturer's Part No.
    STD16N65M5
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    MDmesh™ V
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    6.2mm
  • Height
    2.4mm
  • Length
    6.6mm
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    3
  • Rise Time
    9ns
  • Vgs (Max)
    ±25V
  • Resistance
    299mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Case Connection
    DRAIN
  • Contact Plating
    Tin
  • Fall Time (Typ)
    7 ns
  • Base Part Number
    STD16
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    17 Weeks
  • Power Dissipation
    90W
  • Threshold Voltage
    4V
  • Additional Feature
    ULTRA-LOW RESISTANCE
  • Number of Elements
    1
  • Turn On Delay Time
    25 ns
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    30 ns
  • Element Configuration
    Single
  • Operating Temperature
    150°C TJ
  • Power Dissipation-Max
    90W Tc
  • Number of Terminations
    2
  • Rds On (Max) @ Id, Vgs
    299m Ω @ 6A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    45nC @ 10V
  • Gate to Source Voltage (Vgs)
    25V
  • Avalanche Energy Rating (Eas)
    200 mJ
  • Continuous Drain Current (ID)
    12A
  • Peak Reflow Temperature (Cel)
    260
  • Pulsed Drain Current-Max (IDM)
    48A
  • Drain to Source Breakdown Voltage
    650V
  • Input Capacitance (Ciss) (Max) @ Vds
    1250pF @ 100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    12A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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