STD16N65M5
- Manufacturer's Part No.:STD16N65M5
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:MDmesh™ V
- Description:MOSFET N-CH 650V 12A DPAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- Delivery:
- In Stock: 5400
- Available: 37147
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $3.34400 | US $3.34 |
10+ | US $3.00960 | US $30.10 |
30+ | US $2.34080 | US $70.22 |
100+ | US $1.92280 | US $192.28 |
500+ | US $1.83920 | US $919.60 |
1000+ | US $1.67200 | US $1672.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerSTMicroelectronics
- Manufacturer's Part No.STD16N65M5
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesMDmesh™ V
- ECCNEAR99
- MountSurface Mount
- Width6.2mm
- Height2.4mm
- Length6.6mm
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count3
- Rise Time9ns
- Vgs (Max)±25V
- Resistance299mOhm
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Case ConnectionDRAIN
- Contact PlatingTin
- Fall Time (Typ)7 ns
- Base Part NumberSTD16
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time17 Weeks
- Power Dissipation90W
- Threshold Voltage4V
- Additional FeatureULTRA-LOW RESISTANCE
- Number of Elements1
- Turn On Delay Time25 ns
- Vgs(th) (Max) @ Id5V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time30 ns
- Element ConfigurationSingle
- Operating Temperature150°C TJ
- Power Dissipation-Max90W Tc
- Number of Terminations2
- Rds On (Max) @ Id, Vgs299m Ω @ 6A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
- Gate to Source Voltage (Vgs)25V
- Avalanche Energy Rating (Eas)200 mJ
- Continuous Drain Current (ID)12A
- Peak Reflow Temperature (Cel)260
- Pulsed Drain Current-Max (IDM)48A
- Drain to Source Breakdown Voltage650V
- Input Capacitance (Ciss) (Max) @ Vds1250pF @ 100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C12A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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