STD1NK60T4
- Manufacturer's Part No.:STD1NK60T4
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- Series:SuperMESH™
- Description:MOSFET N-CH 600V 1A DPAK
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- In Stock: 60000
- Available: 47500
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $0.75396 | US $0.75 |
10+ | US $0.50264 | US $5.03 |
30+ | US $0.37698 | US $11.31 |
100+ | US $0.30158 | US $30.16 |
500+ | US $0.27645 | US $138.23 |
1000+ | US $0.25132 | US $251.32 |
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- Description
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The STD1NK60T4 is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for various applications, including power management, switching, and amplification in electronic circuits. Here’s a detailed description of its key features and specifications:
Key Features:
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Voltage Rating: The STD1NK60T4 has a maximum drain-source voltage (V_DS) of 600 volts, making it suitable for high-voltage applications.
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Current Rating: It can handle a continuous drain current (I_D) of up to 1 ampere, which allows it to be used in moderate power applications.
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R_DS(on): The on-resistance (R_DS(on)) is typically low, around 1.6 ohms at a gate-source voltage (V_GS) of 10 volts. This low on-resistance contributes to reduced power losses during operation.
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Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 2 to 4 volts, which indicates the voltage required to turn the MOSFET on. This feature allows for compatibility with various control voltages.
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Package Type: The STD1NK60T4 is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in power applications.
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Fast Switching: The device is designed for fast switching applications, making it ideal for use in switching power supplies and other high-frequency applications.
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Thermal Characteristics: The TO-220 package allows for efficient heat dissipation, with a thermal resistance junction-to-case (R_θJC) that enables the device to operate effectively under load.
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Applications: Common applications include power supplies, motor control, lighting control, and other electronic circuits requiring efficient switching.
Electrical Characteristics:
- Maximum Drain-Source Voltage (V_DS): 600V
- Continuous Drain Current (I_D): 1A
- Pulsed Drain Current (I_D, pulsed): 2A
- Gate-Source Voltage (V_GS): ±20V
- Total Gate Charge (Q_g): Typically around 20 nC, which indicates the charge required to switch the MOSFET on and off.
Conclusion:
The STD1NK60T4 from STMicroelectronics is a robust and versatile N-channel MOSFET suitable for a wide range of high-voltage applications. Its combination of high voltage rating, low on-resistance, and fast switching capabilities makes it an excellent choice for engineers looking to design efficient and reliable electronic circuits.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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