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STD35P6LLF6

  • In Stock: 236598
  • Available: 5000

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.21128US $1.21
10+US $0.80752US $8.08
30+US $0.60564US $18.17
100+US $0.48451US $48.45
500+US $0.44414US $222.07
1000+US $0.40376US $403.76

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Description

The STD35P6LLF6 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for high-efficiency applications, particularly in power management and switching applications. Here’s a detailed description of its key features and specifications:

General Characteristics:

  • Type: N-channel MOSFET
  • Package: Typically available in a TO-220 or DPAK package, which allows for efficient heat dissipation and easy mounting on PCBs.
  • Technology: Utilizes STMicroelectronics' advanced technology to provide low on-resistance and high-speed switching capabilities.

Electrical Specifications:

  • Drain-Source Voltage (V_DS): The STD35P6LLF6 can handle a maximum drain-source voltage of 60V, making it suitable for various applications that require voltage regulation and switching.
  • Continuous Drain Current (I_D): It can conduct a continuous drain current of up to 35A at a specified temperature, allowing it to handle significant loads.
  • Pulsed Drain Current (I_D, pulsed): The device can handle higher pulsed currents, typically around 100A, which is useful for applications that require short bursts of high current.
  • On-Resistance (R_DS(on)): The on-resistance is typically low (around 0.025 ohms at V_GS = 10V), which minimizes power loss during operation and improves overall efficiency.

Thermal Characteristics:

  • Junction-to-Case Thermal Resistance (RθJC): This parameter indicates how effectively the device can dissipate heat. A lower value means better thermal performance, which is crucial for maintaining reliability in high-power applications.
  • Maximum Junction Temperature (T_j): The maximum junction temperature is typically rated at 150°C, allowing for operation in demanding environments.

Switching Characteristics:

  • Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 2V to 4V, which indicates the voltage required to turn the MOSFET on. This feature allows for compatibility with low-voltage control signals.
  • Turn-On and Turn-Off Times: The device is designed for fast switching, with low turn-on and turn-off times, making it suitable for high-frequency applications.

Applications:

The STD35P6LLF6 is commonly used in:

  • Power supplies
  • DC-DC converters
  • Motor control circuits
  • Lighting applications
  • Battery management systems

Additional Features:

  • Avalanche Rated: The device is designed to withstand avalanche conditions, providing additional reliability in transient situations.
  • RoHS Compliant: The STD35P6LLF6 is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it suitable for environmentally conscious designs.

Conclusion:

The STD35P6LLF6 from STMicroelectronics is a robust and efficient power MOSFET that offers excellent performance in a variety of applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a popular choice for engineers looking to optimize power management solutions.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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