STD35P6LLF6
- Manufacturer's Part No.:STD35P6LLF6
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- Series:STripFET™ F6
- Description:MOSFET P-CH 60V 35A DPAK
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- In Stock: 236598
- Available: 5000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.21128 | US $1.21 |
10+ | US $0.80752 | US $8.08 |
30+ | US $0.60564 | US $18.17 |
100+ | US $0.48451 | US $48.45 |
500+ | US $0.44414 | US $222.07 |
1000+ | US $0.40376 | US $403.76 |
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The STD35P6LLF6 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for high-efficiency applications, particularly in power management and switching applications. Here’s a detailed description of its key features and specifications:
General Characteristics:
- Type: N-channel MOSFET
- Package: Typically available in a TO-220 or DPAK package, which allows for efficient heat dissipation and easy mounting on PCBs.
- Technology: Utilizes STMicroelectronics' advanced technology to provide low on-resistance and high-speed switching capabilities.
Electrical Specifications:
- Drain-Source Voltage (V_DS): The STD35P6LLF6 can handle a maximum drain-source voltage of 60V, making it suitable for various applications that require voltage regulation and switching.
- Continuous Drain Current (I_D): It can conduct a continuous drain current of up to 35A at a specified temperature, allowing it to handle significant loads.
- Pulsed Drain Current (I_D, pulsed): The device can handle higher pulsed currents, typically around 100A, which is useful for applications that require short bursts of high current.
- On-Resistance (R_DS(on)): The on-resistance is typically low (around 0.025 ohms at V_GS = 10V), which minimizes power loss during operation and improves overall efficiency.
Thermal Characteristics:
- Junction-to-Case Thermal Resistance (RθJC): This parameter indicates how effectively the device can dissipate heat. A lower value means better thermal performance, which is crucial for maintaining reliability in high-power applications.
- Maximum Junction Temperature (T_j): The maximum junction temperature is typically rated at 150°C, allowing for operation in demanding environments.
Switching Characteristics:
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 2V to 4V, which indicates the voltage required to turn the MOSFET on. This feature allows for compatibility with low-voltage control signals.
- Turn-On and Turn-Off Times: The device is designed for fast switching, with low turn-on and turn-off times, making it suitable for high-frequency applications.
Applications:
The STD35P6LLF6 is commonly used in:
- Power supplies
- DC-DC converters
- Motor control circuits
- Lighting applications
- Battery management systems
Additional Features:
- Avalanche Rated: The device is designed to withstand avalanche conditions, providing additional reliability in transient situations.
- RoHS Compliant: The STD35P6LLF6 is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it suitable for environmentally conscious designs.
Conclusion:
The STD35P6LLF6 from STMicroelectronics is a robust and efficient power MOSFET that offers excellent performance in a variety of applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a popular choice for engineers looking to optimize power management solutions.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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