STD3N80K5

The STD3N80K5 is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for applications requiring efficient switching and high power handling capabilities. Here’s a detailed description of its key features and specifications:

Key Features:

1. Voltage Rating: The STD3N80K5 has a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 3A at a specified temperature, which allows it to be used in various power management applications.

3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.5 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation, enhancing overall efficiency.

4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically in the range of 2V to 4V, which allows for easy driving with standard logic levels.

5. Package Type: The STD3N80K5 is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.

6. Thermal Characteristics: The device has a maximum junction temperature (T_j) of 150°C, allowing it to operate in demanding thermal environments.

7. Fast Switching: The STD3N80K5 is designed for fast switching applications, making it ideal for use in power supplies, motor drivers, and other switching applications.

8. Applications: Common applications include switch-mode power supplies (SMPS), inverters, and other high-voltage switching applications where efficiency and reliability are critical.

Electrical Characteristics:

• Maximum Drain-Source Voltage (V_DS): 800V
• Continuous Drain Current (I_D): 3A
• Pulsed Drain Current (I_D, pulsed): 12A
• Gate-Source Voltage (V_GS): ±20V
• Total Gate Charge (Q_g): Approximately 20nC at V_GS = 10V
• Input Capacitance (C_iss): Typically around 2000pF

Conclusion:

The STD3N80K5 from STMicroelectronics is a robust and efficient N-channel MOSFET that is well-suited for high-voltage applications. Its combination of high voltage rating, low on-resistance, and fast switching capabilities makes it a popular choice for engineers designing power electronics systems. Whether used in consumer electronics, industrial applications, or renewable energy systems, the STD3N80K5 provides reliable performance and efficiency.