STD7N80K5

The STD7N80K5 is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for applications requiring efficient switching and high power handling capabilities. Here’s a detailed description of its key features and specifications:

Key Features:

1. Voltage Rating: The STD7N80K5 has a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 7A at a specified temperature, which allows it to be used in various power applications.

3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.8 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation, enhancing efficiency.

4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which allows for easy driving with standard logic levels.

5. Package Type: The STD7N80K5 is typically available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.

6. Thermal Resistance: The thermal resistance from junction to case (R_thJC) is low, allowing for effective heat management during operation.

7. Fast Switching: The device is designed for fast switching applications, making it ideal for use in power supplies, motor drivers, and other switching applications.

8. Applications: Common applications include switch-mode power supplies (SMPS), inverters, and other high-voltage switching applications where efficiency and reliability are critical.

Electrical Characteristics:

• Maximum Drain-Source Voltage (V_DS): 800V
• Continuous Drain Current (I_D): 7A
• Pulsed Drain Current (I_D, pulsed): Higher than continuous rating, typically specified in the datasheet.
• Gate-Source Voltage (V_GS): ±20V maximum.
• Total Gate Charge (Q_g): Typically specified to indicate how much charge is needed to switch the MOSFET on and off.

Performance:

The STD7N80K5 is characterized by its robust performance in high-voltage environments, making it a reliable choice for engineers designing power electronics. Its low on-resistance and high voltage rating allow for efficient operation, reducing heat generation and improving overall system reliability.

Conclusion:

In summary, the STD7N80K5 from STMicroelectronics is a versatile and efficient N-channel MOSFET suitable for a wide range of high-voltage applications. Its combination of high voltage rating, low on-resistance, and fast switching capabilities makes it an excellent choice for power management solutions in various electronic devices.