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STGB3NC120HDT4
- Manufacturer's Part No.:STGB3NC120HDT4
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- Series:PowerMESH™
- Description:IGBT 1200V 14A 75W D2PAK
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- Quantity:Buy NowAdd to Cart
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- In Stock: 10000
- Available: 42679
Reference Price(In US Dollars)
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1+ | US $18.64712 | US $18.65 |
| 10+ | US $16.78241 | US $167.82 |
| 30+ | US $13.05298 | US $391.59 |
| 100+ | US $10.72209 | US $1072.21 |
| 500+ | US $10.25592 | US $5127.96 |
| 1000+ | US $9.32356 | US $9323.56 |
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- Description
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The STGB3NC120HDT4 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in various applications, including power management, motor control, and switching applications, where efficiency and thermal performance are critical.
Key Features:
- Voltage Rating: The STGB3NC120HDT4 has a maximum drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
- Current Rating: It can handle a continuous drain current (I_D) of up to 50A, which allows it to manage significant power loads effectively.
- R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.045 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power losses during operation, enhancing overall efficiency.
- Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, allowing for easy drive with standard logic levels.
- Package Type: The device is housed in a DPAK (TO-252) package, which provides good thermal performance and is suitable for surface mounting. The DPAK package is known for its robust construction and ability to dissipate heat effectively.
- Thermal Resistance: The thermal resistance from junction to case (R_thJC) is low, which helps in maintaining lower operating temperatures during high-load conditions.
- Switching Performance: The STGB3NC120HDT4 exhibits fast switching speeds, making it ideal for applications that require rapid on/off control, such as in power converters and inverters.
- Applications: This MOSFET is commonly used in applications such as:
- DC-DC converters
- Motor drivers
- Lighting control
- Industrial automation systems
Electrical Characteristics:
- Maximum Gate-Source Voltage (V_GS): ±20V- Maximum Pulsed Drain Current (I_D, pulsed): 100A
- Total Gate Charge (Q_g): Approximately 60 nC, which indicates the amount of charge needed to turn the MOSFET on and off.
Reliability and Compliance:
The STGB3NC120HDT4 is designed to meet stringent reliability standards and is compliant with RoHS (Restriction of Hazardous Substances) regulations, making it suitable for environmentally conscious designs.
Conclusion:
The STGB3NC120HDT4 from STMicroelectronics is a versatile and efficient N-channel MOSFET that offers high voltage and current handling capabilities, low on-resistance, and fast switching performance. Its robust design and thermal characteristics make it an excellent choice for a wide range of power electronic applications.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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