STGB3NC120HDT4

The STGB3NC120HDT4 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in various applications, including power management, motor control, and switching applications, where efficiency and thermal performance are critical.

Key Features:

1. Voltage Rating: The STGB3NC120HDT4 has a maximum drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 50A, which allows it to manage significant power loads effectively.

3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.045 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power losses during operation, enhancing overall efficiency.

4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, allowing for easy drive with standard logic levels.

5. Package Type: The device is housed in a DPAK (TO-252) package, which provides good thermal performance and is suitable for surface mounting. The DPAK package is known for its robust construction and ability to dissipate heat effectively.

6. Thermal Resistance: The thermal resistance from junction to case (R_thJC) is low, which helps in maintaining lower operating temperatures during high-load conditions.

7. Switching Performance: The STGB3NC120HDT4 exhibits fast switching speeds, making it ideal for applications that require rapid on/off control, such as in power converters and inverters.

8. Applications: This MOSFET is commonly used in applications such as:

   • Power supplies
   • DC-DC converters
   • Motor drivers
   • Lighting control
   • Industrial automation systems

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Pulsed Drain Current (I_D, pulsed): 100A
• Total Gate Charge (Q_g): Approximately 60 nC, which indicates the amount of charge needed to turn the MOSFET on and off.

Reliability and Compliance:

The STGB3NC120HDT4 is designed to meet stringent reliability standards and is compliant with RoHS (Restriction of Hazardous Substances) regulations, making it suitable for environmentally conscious designs.

Conclusion:

The STGB3NC120HDT4 from STMicroelectronics is a versatile and efficient N-channel MOSFET that offers high voltage and current handling capabilities, low on-resistance, and fast switching performance. Its robust design and thermal characteristics make it an excellent choice for a wide range of power electronic applications.