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STGB6NC60HDT4
- Manufacturer's Part No.:STGB6NC60HDT4
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:PowerMESH™
- Description:IGBT 600V 15A 56W D2PAK
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 146776
- Available: 143207
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $18.12000 | US $18.12 |
10+ | US $16.30800 | US $163.08 |
30+ | US $12.68400 | US $380.52 |
100+ | US $10.41900 | US $1041.90 |
500+ | US $9.96600 | US $4983.00 |
1000+ | US $9.06000 | US $9060.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerSTMicroelectronics
- Manufacturer's Part No.STGB6NC60HDT4
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- SeriesPowerMESH™
- ECCNEAR99
- MountSurface Mount
- Width9.35mm
- Height4.6mm
- Length10.4mm
- Weight2.240009g
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count3
- Rise Time5ns
- Input TypeStandard
- Gate Charge13.6nC
- Part StatusActive
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time17.3 ns
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating15A
- Number of Pins3
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Test Condition390V, 3A, 10 Ω, 15V
- Terminal FinishMATTE TIN
- Base Part NumberSTGB6
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Switching Energy20μJ (on), 68μJ (off)
- Factory Lead Time8 Weeks
- Number of Elements1
- Turn On Delay Time13 ns
- Voltage - Rated DC600V
- Radiation HardeningNo
- Td (on/off) @ 25°C12ns/76ns
- Turn-Off Delay Time98 ns
- Element ConfigurationSingle
- Max Breakdown Voltage600V
- Max Collector Current15A
- Max Power Dissipation56W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time21 ns
- Number of Terminations2
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 3A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)222 ns
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Continuous Collector Current12A
- Gate-Emitter Thr Voltage-Max5.75V
- Peak Reflow Temperature (Cel)245
- Collector Emitter Voltage (VCEO)600V
- Current - Collector Pulsed (Icm)21A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.7V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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