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STGB7NC60HDT4
- Manufacturer's Part No.:STGB7NC60HDT4
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:PowerMESH™
- Description:IGBT 600V 25A 80W D2PAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 10000
- Available: 95807
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $4.18000 | US $4.18 |
10+ | US $3.76200 | US $37.62 |
30+ | US $2.92600 | US $87.78 |
100+ | US $2.40350 | US $240.35 |
500+ | US $2.29900 | US $1149.50 |
1000+ | US $2.09000 | US $2090.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerSTMicroelectronics
- Manufacturer's Part No.STGB7NC60HDT4
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- SeriesPowerMESH™
- ECCNEAR99
- MountSurface Mount
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count4
- Rise Time8.5ns
- Input TypeStandard
- Gate Charge35nC
- Part StatusActive
- Power - Max80W
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time25.5 ns
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating14A
- Number of Pins3
- Package / CaseTO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Test Condition390V, 7A, 10 Ω, 15V
- Terminal FinishMatte Tin (Sn) - annealed
- Base Part NumberSTGB7
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Switching Energy95μJ (on), 115μJ (off)
- Factory Lead Time8 Weeks
- Power Dissipation25W
- Number of Elements1
- Turn On Delay Time18.5 ns
- Voltage - Rated DC600V
- Radiation HardeningNo
- Td (on/off) @ 25°C18.5ns/72ns
- Turn-Off Delay Time72 ns
- Element ConfigurationSingle
- Max Breakdown Voltage600V
- Max Collector Current25A
- Max Power Dissipation80W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time37 ns
- Number of Terminations2
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 7A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)221 ns
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max5.75V
- Peak Reflow Temperature (Cel)245
- Collector Emitter Voltage (VCEO)600V
- Current - Collector Pulsed (Icm)50A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.5V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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