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STGD18N40LZT4

  • In Stock: 4950
  • Available: 114974

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.76000US $2.76
10+US $2.48400US $24.84
30+US $1.93200US $57.96
100+US $1.58700US $158.70
500+US $1.51800US $759.00
1000+US $1.38000US $1380.00

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Product Parameter

  • Manufacturer
    STMicroelectronics
  • Manufacturer's Part No.
    STGD18N40LZT4
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - IGBTs - Single
  • Series
    Automotive, AEC-Q101, PowerMESH™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    6.2mm
  • Height
    2.4mm
  • Length
    6.6mm
  • Weight
    350.003213mg
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    3
  • Input Type
    Logic
  • Gate Charge
    29nC
  • Part Status
    Active
  • Power - Max
    125W
  • Subcategory
    Insulated Gate BIP Transistors
  • REACH Status
    REACH Unaffected
  • Turn On Time
    4450 ns
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Number of Pins
    3
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Test Condition
    300V, 10A, 5V
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Matte Tin (Sn)
  • Base Part Number
    STGD18
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    8 Weeks
  • Additional Feature
    VOLTAGE CLAMPING
  • Number of Elements
    1
  • Turn On Delay Time
    650 ms
  • Radiation Hardening
    No
  • Td (on/off) @ 25°C
    650ns/13.5μs
  • Turn-Off Delay Time
    13.5 s
  • Element Configuration
    Single
  • Max Breakdown Voltage
    420V
  • Max Collector Current
    25A
  • Max Power Dissipation
    125W
  • Operating Temperature
    -55°C~175°C TJ
  • Polarity/Channel Type
    N-CHANNEL
  • Number of Terminations
    2
  • Transistor Application
    AUTOMOTIVE IGNITION
  • Vce(on) (Max) @ Vge, Ic
    1.7V @ 4.5V, 10A
  • Gate-Emitter Voltage-Max
    16V
  • Turn Off Time-Nom (toff)
    22200 ns
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Peak Reflow Temperature (Cel)
    260
  • Collector Emitter Voltage (VCEO)
    360V
  • Current - Collector Pulsed (Icm)
    40A
  • Collector Emitter Breakdown Voltage
    420V
  • Collector Emitter Saturation Voltage
    1.35V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSSO-G2
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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