STGD18N40LZT4
- Manufacturer's Part No.:STGD18N40LZT4
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:Automotive, AEC-Q101, PowerMESH™
- Description:IGBT 420V 25A 125W DPAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- Delivery:
- In Stock: 4950
- Available: 114974
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.76000 | US $2.76 |
10+ | US $2.48400 | US $24.84 |
30+ | US $1.93200 | US $57.96 |
100+ | US $1.58700 | US $158.70 |
500+ | US $1.51800 | US $759.00 |
1000+ | US $1.38000 | US $1380.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerSTMicroelectronics
- Manufacturer's Part No.STGD18N40LZT4
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- SeriesAutomotive, AEC-Q101, PowerMESH™
- ECCNEAR99
- MountSurface Mount
- Width6.2mm
- Height2.4mm
- Length6.6mm
- Weight350.003213mg
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count3
- Input TypeLogic
- Gate Charge29nC
- Part StatusActive
- Power - Max125W
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time4450 ns
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins3
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Test Condition300V, 10A, 5V
- Case ConnectionCOLLECTOR
- Terminal FinishMatte Tin (Sn)
- Base Part NumberSTGD18
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time8 Weeks
- Additional FeatureVOLTAGE CLAMPING
- Number of Elements1
- Turn On Delay Time650 ms
- Radiation HardeningNo
- Td (on/off) @ 25°C650ns/13.5μs
- Turn-Off Delay Time13.5 s
- Element ConfigurationSingle
- Max Breakdown Voltage420V
- Max Collector Current25A
- Max Power Dissipation125W
- Operating Temperature-55°C~175°C TJ
- Polarity/Channel TypeN-CHANNEL
- Number of Terminations2
- Transistor ApplicationAUTOMOTIVE IGNITION
- Vce(on) (Max) @ Vge, Ic1.7V @ 4.5V, 10A
- Gate-Emitter Voltage-Max16V
- Turn Off Time-Nom (toff)22200 ns
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)260
- Collector Emitter Voltage (VCEO)360V
- Current - Collector Pulsed (Icm)40A
- Collector Emitter Breakdown Voltage420V
- Collector Emitter Saturation Voltage1.35V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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