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STGD6NC60HDT4
- Manufacturer's Part No.:STGD6NC60HDT4
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:PowerMESH™
- Description:IGBT 600V 15A 56W DPAK
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 130000
- Available: 146332
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.63770 | US $1.64 |
10+ | US $1.09180 | US $10.92 |
30+ | US $0.81885 | US $24.57 |
100+ | US $0.65508 | US $65.51 |
500+ | US $0.60049 | US $300.25 |
1000+ | US $0.54590 | US $545.90 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerSTMicroelectronics
- Manufacturer's Part No.STGD6NC60HDT4
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- SeriesPowerMESH™
- ECCNEAR99
- MountSurface Mount
- Width6.2mm
- Height2.4mm
- Length6.6mm
- Weight350.003213mg
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count3
- Input TypeStandard
- Gate Charge13.6nC
- Part StatusActive
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time17.3 ns
- JEDEC-95 CodeTO-252AA
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Current Rating15A
- Number of Pins3
- Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
- Test Condition390V, 3A, 10 Ω, 15V
- Terminal FinishTin (Sn)
- Base Part NumberSTGD6
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Switching Energy20μJ (on), 68μJ (off)
- Factory Lead Time8 Weeks
- Power Dissipation50W
- Number of Elements1
- Turn On Delay Time12 ns
- Voltage - Rated DC600V
- Radiation HardeningNo
- Td (on/off) @ 25°C12ns/76ns
- Turn-Off Delay Time40 ns
- Element ConfigurationSingle
- Max Breakdown Voltage600V
- Max Collector Current15A
- Max Power Dissipation56W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time21 ns
- Number of Terminations2
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 3A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)222 ns
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Continuous Collector Current6A
- Gate-Emitter Thr Voltage-Max5.75V
- Peak Reflow Temperature (Cel)260
- Collector Emitter Voltage (VCEO)600V
- Current - Collector Pulsed (Icm)21A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage1.9V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-30 CodeR-PSSO-G2
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
SHIPPING GUIDE
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