STGF14NC60KD
- Manufacturer's Part No.:STGF14NC60KD
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:PowerMESH™
- Description:IGBT 600V 11A 28W TO220FP
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 58000
- Available: 56000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.46645 | US $2.47 |
10+ | US $1.64430 | US $16.44 |
30+ | US $1.23323 | US $37.00 |
100+ | US $0.98658 | US $98.66 |
500+ | US $0.90437 | US $452.19 |
1000+ | US $0.82215 | US $822.15 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerSTMicroelectronics
- Manufacturer's Part No.STGF14NC60KD
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- SeriesPowerMESH™
- ECCNEAR99
- MountThrough Hole
- Width4.6mm
- Height9.3mm
- Length10.4mm
- Weight2.299997g
- Lead FreeLead Free
- PackagingTube
- Pin Count3
- Rise Time8.5ns
- Input TypeStandard
- Gate Charge34.4nC
- Part StatusActive
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time31.5 ns
- JEDEC-95 CodeTO-220AB
- Mounting TypeThrough Hole
- Current Rating11A
- Number of Pins3
- Package / CaseTO-220-3 Full Pack
- Test Condition390V, 7A, 10 Ω, 15V
- Case ConnectionISOLATED
- Terminal FinishMatte Tin (Sn)
- Base Part NumberSTGF14
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Switching Energy82μJ (on), 155μJ (off)
- Factory Lead Time8 Weeks
- Power Dissipation28W
- Additional FeatureULTRA FAST
- Number of Elements1
- Turn On Delay Time22.5 ns
- Voltage - Rated DC600V
- Radiation HardeningNo
- Td (on/off) @ 25°C22.5ns/116ns
- Turn-Off Delay Time116 ns
- Element ConfigurationSingle
- Max Collector Current11A
- Max Power Dissipation28W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time37 ns
- Number of Terminations3
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 7A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)340 ns
- Transistor Element MaterialSILICON
- Continuous Collector Current7A
- Gate-Emitter Thr Voltage-Max7V
- Collector Emitter Voltage (VCEO)600V
- Current - Collector Pulsed (Icm)50A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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