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STGW30NC60WD
- Manufacturer's Part No.:STGW30NC60WD
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:PowerMESH™
- Description:IGBT 600V 60A 200W TO247
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- In Stock: 400050
- Available: 19729
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $3.36000 | US $3.36 |
10+ | US $3.02400 | US $30.24 |
30+ | US $2.35200 | US $70.56 |
100+ | US $1.93200 | US $193.20 |
500+ | US $1.84800 | US $924.00 |
1000+ | US $1.68000 | US $1680.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerSTMicroelectronics
- Manufacturer's Part No.STGW30NC60WD
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - IGBTs - Single
- SeriesPowerMESH™
- ECCNEAR99
- MountThrough Hole
- Width5.15mm
- Height20.15mm
- Length15.75mm
- Lead FreeLead Free
- PackagingTube
- Pin Count3
- Rise Time12ns
- Input TypeStandard
- Gate Charge102nC
- Part StatusActive
- SubcategoryInsulated Gate BIP Transistors
- REACH StatusREACH Unaffected
- Turn On Time42.5 ns
- JEDEC-95 CodeTO-247AC
- Mounting TypeThrough Hole
- Current Rating60A
- Number of Pins3
- Package / CaseTO-247-3
- Test Condition390V, 20A, 10 Ω, 15V
- Case ConnectionISOLATED
- Terminal FinishTin (Sn)
- Base Part NumberSTGW30
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Switching Energy305μJ (on), 181μJ (off)
- Factory Lead Time8 Weeks
- Power Dissipation200W
- Number of Elements1
- Turn On Delay Time29.5 ns
- Voltage - Rated DC600V
- Radiation HardeningNo
- Td (on/off) @ 25°C29.5ns/118ns
- Turn-Off Delay Time118 ns
- Element ConfigurationSingle
- Max Collector Current60A
- Max Power Dissipation200W
- Operating Temperature-55°C~150°C TJ
- Polarity/Channel TypeN-CHANNEL
- Reverse Recovery Time40 ns
- Number of Terminations3
- Transistor ApplicationPOWER CONTROL
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 20A
- Gate-Emitter Voltage-Max20V
- Turn Off Time-Nom (toff)189 ns
- Transistor Element MaterialSILICON
- Gate-Emitter Thr Voltage-Max5.75V
- Collector Emitter Voltage (VCEO)600V
- Current - Collector Pulsed (Icm)150A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.1V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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