STGW80H65DFB
- Manufacturer's Part No.:STGW80H65DFB
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- Description:IGBT 650V 120A 469W TO-247
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- In Stock: 13680
- Available: 11588
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $5.67600 | US $5.68 |
10+ | US $5.10840 | US $51.08 |
30+ | US $3.97320 | US $119.20 |
100+ | US $3.26370 | US $326.37 |
500+ | US $3.12180 | US $1560.90 |
1000+ | US $2.83800 | US $2838.00 |
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The STGW80H65DFB is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in various applications, including power conversion, motor control, and industrial equipment. Here’s a detailed description of its key features and specifications:
Key Features:
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Type: N-channel MOSFET
- The STGW80H65DFB is an N-channel device, which means it conducts when a positive voltage is applied to the gate relative to the source.
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Voltage Rating: 650V
- This MOSFET can handle a maximum drain-source voltage (V_DS) of 650 volts, making it suitable for high-voltage applications.
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Current Rating: 80A
- It has a continuous drain current (I_D) rating of 80 amperes, allowing it to handle significant current loads.
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R_DS(on): Low On-Resistance
- The device features a low on-resistance (R_DS(on)), typically around 0.18 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power losses during operation.
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Gate Threshold Voltage (V_GS(th)): 2V to 4V
- The gate threshold voltage indicates the minimum gate-source voltage required to turn the MOSFET on. This range allows for efficient switching in various applications.
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Package Type: TO-247
- The STGW80H65DFB is housed in a TO-247 package, which is designed for high-power applications. This package provides good thermal performance and is suitable for mounting on heatsinks.
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Thermal Resistance: Low
- The device has a low thermal resistance, which helps in efficient heat dissipation, allowing it to operate at higher power levels without overheating.
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Fast Switching Speed:
- The MOSFET is designed for fast switching applications, making it ideal for use in switch-mode power supplies (SMPS) and other high-frequency applications.
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Robustness:
- The STGW80H65DFB is designed to withstand harsh operating conditions, including high temperatures and voltage spikes, ensuring reliability in demanding environments.
Applications:
- Power Supplies: Used in switch-mode power supplies (SMPS) for efficient power conversion.
- Motor Drives: Suitable for driving electric motors in industrial and automotive applications.
- Inverters: Commonly used in inverter circuits for renewable energy systems, such as solar inverters.
- Lighting: Can be used in LED drivers and other lighting applications.
Conclusion:
The STGW80H65DFB from STMicroelectronics is a versatile and robust power MOSFET that offers high voltage and current handling capabilities, low on-resistance, and fast switching speeds. Its design makes it suitable for a wide range of applications in power electronics, making it a popular choice among engineers and designers in the field.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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