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STGW80H65DFB
- Manufacturer's Part No.:STGW80H65DFB
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- Series:-
- Description:IGBT 650V 120A 469W TO-247
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- In Stock: 138
- Available: 11588
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $5.67600 | US $5.68 |
10+ | US $5.10840 | US $51.08 |
30+ | US $3.97320 | US $119.20 |
100+ | US $3.26370 | US $326.37 |
500+ | US $3.12180 | US $1560.90 |
1000+ | US $2.83800 | US $2838.00 |
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- Description
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- Shopping Guide
The STGW80H65DFB is a high-performance power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in various applications, including power conversion, motor control, and industrial equipment. Here’s a detailed description of its key features and specifications:
Key Features:
- Type: N-channel MOSFET
- Voltage Rating: 650V
- Current Rating: 80A
- R_DS(on): Low On-Resistance
- Gate Threshold Voltage (V_GS(th)): 2V to 4V
- Package Type: TO-247
- Thermal Resistance: Low
- Fast Switching Speed:
- Robustness:
Applications:
- Power Supplies: Used in switch-mode power supplies (SMPS) for efficient power conversion.- Motor Drives: Suitable for driving electric motors in industrial and automotive applications.
- Inverters: Commonly used in inverter circuits for renewable energy systems, such as solar inverters.
- Lighting: Can be used in LED drivers and other lighting applications.
Conclusion:
The STGW80H65DFB from STMicroelectronics is a versatile and robust power MOSFET that offers high voltage and current handling capabilities, low on-resistance, and fast switching speeds. Its design makes it suitable for a wide range of applications in power electronics, making it a popular choice among engineers and designers in the field.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
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