STH315N10F7-6

The STH315N10F7-6 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. This component is designed for applications requiring efficient power management and switching capabilities, making it suitable for a variety of uses in power supplies, motor drives, and other electronic circuits.

Key Features:

1. Voltage Rating: The STH315N10F7-6 has a maximum drain-source voltage (V_DS) of 100V, allowing it to handle significant voltage levels in various applications.

2. Current Rating: It can support a continuous drain current (I_D) of up to 315A, which is ideal for high-current applications. This capability ensures that the MOSFET can operate effectively without overheating under load.

3. R_DS(on): The on-resistance (R_DS(on)) is exceptionally low, typically around 7.5 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power losses during operation, enhancing overall efficiency.

4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which allows for easy driving with standard logic levels.

5. Package Type: The STH315N10F7-6 is available in a TO-220 package, which provides good thermal performance and allows for easy mounting on heatsinks. This package is commonly used in power applications due to its robust construction and ability to dissipate heat effectively.

6. Thermal Characteristics: The device has a maximum junction temperature (T_j) of 175°C, which provides a wide operating temperature range, making it suitable for demanding environments.

7. Fast Switching: The STH315N10F7-6 is designed for fast switching applications, which is beneficial in reducing switching losses in high-frequency circuits.

8. Applications: This MOSFET is commonly used in various applications, including:

   • DC-DC converters
   • Power inverters
   • Motor control circuits
   • Power management systems
   • Industrial automation

Electrical Characteristics:

• Gate-Source Voltage (V_GS): ±20V maximum
• Body Diode Characteristics: The device features an intrinsic body diode, which allows for reverse conduction and can be beneficial in certain applications.

Conclusion:

The STH315N10F7-6 from STMicroelectronics is a robust and efficient N-channel MOSFET that excels in high-power applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a preferred choice for engineers looking to optimize power efficiency in their designs. Whether used in consumer electronics, industrial equipment, or automotive applications, this MOSFET provides reliable performance and durability.