STN3N40K3

The STN3N40K3 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. This device is designed for applications requiring efficient power management and switching capabilities.

Key Features:

1. Voltage Rating: The STN3N40K3 has a maximum drain-source voltage (V_DS) of 400V, making it suitable for high-voltage applications.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 3A, which allows it to be used in various power applications, including power supplies and motor control.

3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.8 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation, enhancing overall efficiency.

4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which allows for easy driving with standard logic levels.

5. Package Type: The STN3N40K3 is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.

6. Thermal Characteristics: The device has a maximum junction temperature (T_j) of 150°C, allowing it to operate in demanding thermal environments.

7. Switching Speed: The STN3N40K3 features fast switching capabilities, making it ideal for applications such as switch-mode power supplies (SMPS) and DC-DC converters.

Applications:

• Power Supplies: The MOSFET is commonly used in both linear and switching power supplies due to its high voltage and current ratings.
• Motor Control: It is suitable for driving motors in various applications, including industrial automation and consumer electronics.
• Lighting: The device can be used in LED drivers and other lighting applications where efficient power management is crucial.
• Telecommunications: It is also applicable in telecom power systems, where reliability and efficiency are paramount.

Conclusion:

The STN3N40K3 from STMicroelectronics is a robust and efficient N-channel MOSFET that meets the demands of high-voltage and high-current applications. Its combination of low on-resistance, high voltage rating, and fast switching capabilities makes it a versatile choice for engineers looking to optimize power management in their designs.