STP26NM60N

The STP26NM60N is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in various applications, including power management, switching, and amplification in electronic circuits.

Key Features:

1. Voltage Rating: The STP26NM60N has a maximum drain-source voltage (V_DS) of 600 volts, making it suitable for high-voltage applications.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 26 amperes, which allows it to manage significant power loads effectively.

3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.18 ohms at a gate-source voltage (V_GS) of 10 volts. This low on-resistance contributes to reduced power losses and improved efficiency during operation.

4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2 to 4 volts, which means it can be driven by standard logic levels, making it versatile for various control circuits.

5. Package Type: The STP26NM60N is available in a TO-220 package, which provides good thermal performance and allows for easy mounting on heat sinks for effective heat dissipation.

6. Thermal Characteristics: The device has a maximum junction temperature (T_j) of 150 degrees Celsius, which allows it to operate in demanding environments without risk of thermal failure.

7. Fast Switching: The STP26NM60N is designed for fast switching applications, making it suitable for use in power supplies, motor drivers, and other high-frequency applications.

8. Applications: Common applications include switch-mode power supplies (SMPS), DC-DC converters, and inverters, as well as in automotive and industrial systems where high efficiency and reliability are critical.

Electrical Characteristics:

• Gate-Source Voltage (V_GS): ±20V
• Maximum Pulsed Drain Current (I_D, pulsed): 80A
• Total Gate Charge (Q_g): Approximately 40 nC at V_GS = 10V
• Body Diode Characteristics: The device features an intrinsic body diode, which allows for reverse conduction, making it useful in applications requiring freewheeling diodes.

Conclusion:

The STP26NM60N is a robust and efficient N-channel MOSFET that offers high voltage and current handling capabilities, making it an excellent choice for a wide range of power electronic applications. Its combination of low on-resistance, fast switching speed, and thermal performance makes it a reliable component for engineers and designers looking to optimize their circuit designs.