STP4N150

The STP4N150 is a high-voltage N-channel power MOSFET manufactured by STMicroelectronics. It is designed for applications requiring efficient switching and high power handling capabilities. Here’s a detailed description of its key features and specifications:

Key Features:

1. Type: N-channel MOSFET

   • The N-channel configuration allows for better electron mobility, resulting in lower on-resistance and higher efficiency compared to P-channel devices.

2. Voltage Rating: 150V

   • The STP4N150 can handle a maximum drain-source voltage (V_DS) of 150 volts, making it suitable for high-voltage applications.

3. Current Rating: 4A

   • It can conduct a continuous drain current (I_D) of up to 4 amperes, which is adequate for various power applications.

4. On-Resistance (R_DS(on)):

   • The on-resistance is typically low, around 0.5 ohms at a gate-source voltage (V_GS) of 10V. This low R_DS(on) contributes to reduced power losses during operation.

5. Gate Threshold Voltage (V_GS(th)):

   • The gate threshold voltage is typically in the range of 2V to 4V, which indicates the minimum gate voltage required to turn the MOSFET on.

6. Package Type:

   • The STP4N150 is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in power applications.

7. Thermal Resistance:

   • The thermal resistance from junction to case (R_θJC) is low, allowing for efficient heat management, which is crucial for maintaining performance and reliability.

8. Switching Speed:

   • The device features fast switching capabilities, making it ideal for applications such as power supplies, motor drivers, and other switching applications.

9. Applications:

   • Commonly used in power management circuits, DC-DC converters, and inverters, as well as in automotive and industrial applications where high efficiency and reliability are required.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): Typically around 50W, depending on the thermal management.
• Body Diode Characteristics: The STP4N150 includes an intrinsic body diode, which allows for reverse current flow and can be beneficial in certain applications.

Conclusion:

The STP4N150 from STMicroelectronics is a robust and efficient N-channel MOSFET suitable for a variety of high-voltage applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it a popular choice among engineers for designing reliable power electronic circuits.