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STP9NK65ZFP

  • In Stock: 15000
  • Available: 27265

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.50000US $1.50
10+US $1.00000US $10.00
30+US $0.75000US $22.50
100+US $0.60000US $60.00
500+US $0.55000US $275.00
1000+US $0.50000US $500.00

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Description

The STP9NK65ZFP is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in various applications, including power management, switching, and amplification in electronic circuits.

Key Features:

  1. Voltage Rating: The STP9NK65ZFP has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.

  2. Current Rating: It can handle a continuous drain current (I_D) of up to 9A at a specified temperature, which allows it to manage significant power loads.

  3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.9 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation, enhancing efficiency.

  4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which allows for easy driving with standard logic levels.

  5. Package Type: The device is housed in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.

  6. Thermal Resistance: The thermal resistance from junction to case (R_thJC) is low, allowing for effective heat management, which is critical in high-power applications.

  7. Fast Switching: The STP9NK65ZFP is designed for fast switching applications, making it ideal for use in power supplies, motor drivers, and other switching applications.

  8. Applications: Common applications include power converters, inverters, and other circuits requiring efficient switching and power management.

Electrical Characteristics:

  • Maximum Drain-Source Voltage (V_DS): 650V
  • Continuous Drain Current (I_D): 9A
  • Pulsed Drain Current (I_D, pulsed): 30A
  • Gate-Source Voltage (V_GS): ±20V
  • Total Gate Charge (Q_g): Approximately 30nC at V_GS = 10V
  • Body Diode Characteristics: The device features an intrinsic body diode, which can conduct in reverse, providing additional functionality in certain applications.

Applications:

The STP9NK65ZFP is widely used in various applications, including:

  • Switching Power Supplies: For efficient power conversion and regulation.
  • Motor Control: In applications requiring efficient control of DC motors.
  • Lighting Control: In LED drivers and other lighting applications.
  • Inverters: For renewable energy systems, such as solar inverters.

Conclusion:

The STP9NK65ZFP is a robust and efficient N-channel MOSFET that offers high voltage and current handling capabilities, making it suitable for a wide range of power electronics applications. Its low on-resistance and fast switching characteristics contribute to its effectiveness in improving the efficiency of electronic circuits.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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