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STS2DNF30L

  • In Stock: 2500
  • Available: 212741

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $11.55400US $11.55
10+US $10.39860US $103.99
30+US $8.08780US $242.63
100+US $6.64355US $664.36
500+US $6.35470US $3177.35
1000+US $5.77700US $5777.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    STMicroelectronics
  • Manufacturer's Part No.
    STS2DNF30L
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    STripFET™
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • Width
    6.35mm
  • Height
    6.35mm
  • Length
    50.8mm
  • Weight
    4.535924g
  • FET Type
    2 N-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Rise Time
    20ns
  • FET Feature
    Logic Level Gate
  • Part Status
    Not For New Designs
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Configuration
    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • Current Rating
    3A
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Fall Time (Typ)
    8 ns
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Base Part Number
    STS2D
  • Lifecycle Status
    NRND (Last Updated: 7 months ago)
  • Power Dissipation
    2W
  • Threshold Voltage
    1.7V
  • Number of Elements
    2
  • Turn On Delay Time
    19 ns
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Voltage - Rated DC
    30V
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    12 ns
  • Max Power Dissipation
    2W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    110m Ω @ 1A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    3A
  • Gate Charge (Qg) (Max) @ Vgs
    4.5nC @ 10V
  • Gate to Source Voltage (Vgs)
    18V
  • Continuous Drain Current (ID)
    3A
  • Peak Reflow Temperature (Cel)
    260
  • Drain-source On Resistance-Max
    0.15Ohm
  • Pulsed Drain Current-Max (IDM)
    9A
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    121pF @ 25V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS non-compliant
  • JESD-609 Code
    e4
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

SHIPPING GUIDE

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  • Shipping Cost

    Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.

  • Delivery Time

    We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.

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