STS4DNF60L
- Manufacturer's Part No.:STS4DNF60L
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:STripFET™
- Description:MOSFET 2N-CH 60V 4A 8-SOIC
- Datasheet:
- Quantity:Buy NowAdd to Cart
- Payment:
- Delivery:
- In Stock: 241378
- Available: 10000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $1.06920 | US $1.07 |
10+ | US $0.71280 | US $7.13 |
30+ | US $0.53460 | US $16.04 |
100+ | US $0.42768 | US $42.77 |
500+ | US $0.39204 | US $196.02 |
1000+ | US $0.35640 | US $356.40 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerSTMicroelectronics
- Manufacturer's Part No.STS4DNF60L
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesSTripFET™
- Time@Peak Reflow Temperature-Max (s)30
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Part StatusActive
- Operating Temperature-55°C~150°C TJ
- Factory Lead Time12 Weeks
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- MountSurface Mount
- Number of Pins8
- PackagingCut Tape (CT)
- SubcategoryFET General Purpose Power
- Base Part NumberSTS4D
- Number of Terminations8
- Terminal FinishMatte Tin (Sn)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements2
- Lead FreeLead Free
- Current Rating4A
- Additional FeatureLOW THRESHOLD
- Voltage - Rated DC60V
- Height1.25mm
- Length5mm
- Width4.05mm
- Weight4.535924g
- Max Power Dissipation2W
- Mounting TypeSurface Mount
- Transistor Element MaterialSILICON
- Transistor ApplicationSWITCHING
- Power Dissipation2W
- Turn On Delay Time15 ns
- Turn-Off Delay Time45 ns
- Operating ModeENHANCEMENT MODE
- Drain Current-Max (Abs) (ID)4A
- Pulsed Drain Current-Max (IDM)16A
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Continuous Drain Current (ID)4A
- Resistance55mOhm
- Gate to Source Voltage (Vgs)15V
- Drain to Source Breakdown Voltage60V
- Threshold Voltage1.7V
- FET Type2 N-Channel (Dual)
- Vgs(th) (Max) @ Id2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1030pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
- FET FeatureLogic Level Gate
- Rise Time28ns
- Fall Time (Typ)10 ns
- Rds On (Max) @ Id, Vgs55m Ω @ 2A, 10V
Environmental & Export Classifications
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- REACH SVHCNo SVHC
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