STS8DN3LLH5
- Manufacturer's Part No.:STS8DN3LLH5
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:STripFET™ V
- Description:MOSFET 2N-CH 30V 10A 8SO
- Datasheet:
- Quantity:RFQAdd to RFQ List
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- In Stock: 133710
- Available: 128710
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $18.00000 | US $18.00 |
10+ | US $16.20000 | US $162.00 |
30+ | US $12.60000 | US $378.00 |
100+ | US $10.35000 | US $1035.00 |
500+ | US $9.90000 | US $4950.00 |
1000+ | US $9.00000 | US $9000.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerSTMicroelectronics
- Manufacturer's Part No.STS8DN3LLH5
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Arrays
- SeriesSTripFET™ V
- ECCNEAR99
- MountSurface Mount
- FET Type2 N-Channel (Dual)
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Rise Time4.2ns
- Resistance19MOhm
- FET FeatureLogic Level Gate
- Part StatusActive
- SubcategoryFET General Purpose Power
- REACH StatusREACH Unaffected
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Fall Time (Typ)3.5 ns
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- Base Part NumberSTS8DN
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time14 Weeks
- Power Dissipation2.7W
- Number of Elements2
- Turn On Delay Time4 ns
- Vgs(th) (Max) @ Id1V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time21.1 ns
- Element ConfigurationDual
- Max Power Dissipation2.7W
- Operating Temperature-55°C~150°C TJ
- Number of Terminations8
- Rds On (Max) @ Id, Vgs19m Ω @ 5A, 10V
- Transistor ApplicationSWITCHING
- Reflow Temperature-Max (s)30
- Transistor Element MaterialSILICON
- Gate Charge (Qg) (Max) @ Vgs5.4nC @ 4.5V
- Gate to Source Voltage (Vgs)22V
- Continuous Drain Current (ID)10A
- Peak Reflow Temperature (Cel)260
- Drain to Source Voltage (Vdss)30V
- Pulsed Drain Current-Max (IDM)40A
- Drain to Source Breakdown Voltage30V
- Input Capacitance (Ciss) (Max) @ Vds724pF @ 25V
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee4
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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