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STS8DN3LLH5

  • In Stock: 133710
  • Available: 128710

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $18.00000US $18.00
10+US $16.20000US $162.00
30+US $12.60000US $378.00
100+US $10.35000US $1035.00
500+US $9.90000US $4950.00
1000+US $9.00000US $9000.00

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Product Parameter

  • Manufacturer
    STMicroelectronics
  • Manufacturer's Part No.
    STS8DN3LLH5
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    STripFET™ V
  • ECCN
    EAR99
  • Mount
    Surface Mount
  • FET Type
    2 N-Channel (Dual)
  • Lead Free
    Lead Free
  • Packaging
    Tape & Reel (TR)
  • Pin Count
    8
  • Rise Time
    4.2ns
  • Resistance
    19MOhm
  • FET Feature
    Logic Level Gate
  • Part Status
    Active
  • Subcategory
    FET General Purpose Power
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Surface Mount
  • Terminal Form
    GULL WING
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Number of Pins
    8
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Fall Time (Typ)
    3.5 ns
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Base Part Number
    STS8DN
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    14 Weeks
  • Power Dissipation
    2.7W
  • Number of Elements
    2
  • Turn On Delay Time
    4 ns
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    21.1 ns
  • Element Configuration
    Dual
  • Max Power Dissipation
    2.7W
  • Operating Temperature
    -55°C~150°C TJ
  • Number of Terminations
    8
  • Rds On (Max) @ Id, Vgs
    19m Ω @ 5A, 10V
  • Transistor Application
    SWITCHING
  • Reflow Temperature-Max (s)
    30
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    5.4nC @ 4.5V
  • Gate to Source Voltage (Vgs)
    22V
  • Continuous Drain Current (ID)
    10A
  • Peak Reflow Temperature (Cel)
    260
  • Drain to Source Voltage (Vdss)
    30V
  • Pulsed Drain Current-Max (IDM)
    40A
  • Drain to Source Breakdown Voltage
    30V
  • Input Capacitance (Ciss) (Max) @ Vds
    724pF @ 25V

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e4
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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