STW11NK100Z
- Manufacturer's Part No.:STW11NK100Z
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:SuperMESH™
- Description:MOSFET N-CH 1KV 8.3A TO-247
- Datasheet:
- Quantity:Buy NowAdd to Cart
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- Delivery:
- In Stock: 5600
- Available: 12970
- Updated: 9 HRS ago
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $3.46800 | US $3.47 |
10+ | US $3.12120 | US $31.21 |
30+ | US $2.42760 | US $72.83 |
100+ | US $1.99410 | US $199.41 |
500+ | US $1.90740 | US $953.70 |
1000+ | US $1.73400 | US $1734.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerSTMicroelectronics
- Manufacturer's Part No.STW11NK100Z
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- SeriesSuperMESH™
- ECCNEAR99
- MountThrough Hole
- Width5.15mm
- Height24.45mm
- Length15.75mm
- Weight9.071847g
- FET TypeN-Channel
- Lead FreeLead Free
- PackagingTube
- Pin Count3
- Rise Time18ns
- Vgs (Max)±30V
- Resistance1.38Ohm
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- SubcategoryFET General Purpose Power
- JEDEC-95 CodeTO-247AC
- Mounting TypeThrough Hole
- Current Rating8.3A
- Number of Pins3
- Operating ModeENHANCEMENT MODE
- Package / CaseTO-247-3
- Fall Time (Typ)55 ns
- Terminal FinishTin (Sn)
- Base Part NumberSTW11N
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- Power Dissipation230W
- Threshold Voltage3.75V
- Additional FeatureAVALANCHE RATED, HIGH VOLTAGE
- Number of Channels1
- Number of Elements1
- Turn On Delay Time27 ns
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Voltage - Rated DC1kV
- Radiation HardeningNo
- Turn-Off Delay Time98 ns
- Element ConfigurationSingle
- Operating Temperature-55°C~150°C TJ
- Power Dissipation-Max230W Tc
- Number of Terminations3
- Rds On (Max) @ Id, Vgs1.38 Ω @ 4.15A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)9A
- Gate Charge (Qg) (Max) @ Vgs162nC @ 10V
- Gate to Source Voltage (Vgs)30V
- Avalanche Energy Rating (Eas)550 mJ
- Continuous Drain Current (ID)8.3A
- Max Junction Temperature (Tj)150°C
- Drain to Source Voltage (Vdss)1000V
- Drain to Source Breakdown Voltage1kV
- Input Capacitance (Ciss) (Max) @ Vds3500pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Current - Continuous Drain (Id) @ 25°C8.3A Tc
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- JESD-609 Codee3
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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