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STW11NK100Z

  • In Stock: 5600
  • Available: 12970
  • Updated: 9 HRS ago

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.46800US $3.47
10+US $3.12120US $31.21
30+US $2.42760US $72.83
100+US $1.99410US $199.41
500+US $1.90740US $953.70
1000+US $1.73400US $1734.00

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Product Parameter

  • Manufacturer
    STMicroelectronics
  • Manufacturer's Part No.
    STW11NK100Z
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    SuperMESH™
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Width
    5.15mm
  • Height
    24.45mm
  • Length
    15.75mm
  • Weight
    9.071847g
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Pin Count
    3
  • Rise Time
    18ns
  • Vgs (Max)
    ±30V
  • Resistance
    1.38Ohm
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Subcategory
    FET General Purpose Power
  • JEDEC-95 Code
    TO-247AC
  • Mounting Type
    Through Hole
  • Current Rating
    8.3A
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-247-3
  • Fall Time (Typ)
    55 ns
  • Terminal Finish
    Tin (Sn)
  • Base Part Number
    STW11N
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Power Dissipation
    230W
  • Threshold Voltage
    3.75V
  • Additional Feature
    AVALANCHE RATED, HIGH VOLTAGE
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    27 ns
  • Vgs(th) (Max) @ Id
    4.5V @ 100μA
  • Voltage - Rated DC
    1kV
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    98 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    230W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    1.38 Ω @ 4.15A, 10V
  • Transistor Application
    SWITCHING
  • Transistor Element Material
    SILICON
  • Drain Current-Max (Abs) (ID)
    9A
  • Gate Charge (Qg) (Max) @ Vgs
    162nC @ 10V
  • Gate to Source Voltage (Vgs)
    30V
  • Avalanche Energy Rating (Eas)
    550 mJ
  • Continuous Drain Current (ID)
    8.3A
  • Max Junction Temperature (Tj)
    150°C
  • Drain to Source Voltage (Vdss)
    1000V
  • Drain to Source Breakdown Voltage
    1kV
  • Input Capacitance (Ciss) (Max) @ Vds
    3500pF @ 25V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    8.3A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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