STW24N60M2

The STW24N60M2 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in various applications, including power management, switching, and amplification in electronic circuits. Here’s a detailed description of its key features and specifications:

Key Features:

1. Voltage Rating: The STW24N60M2 has a maximum drain-source voltage (V_DS) of 600 volts, making it suitable for high-voltage applications.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 24 amperes, which allows it to manage significant power loads effectively.

3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.18 ohms at a gate-source voltage (V_GS) of 10 volts. This low on-resistance contributes to reduced power losses during operation, enhancing efficiency.

4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is in the range of 2 to 4 volts, which indicates the voltage required to turn the MOSFET on. This feature allows for compatibility with various control circuits.

5. Fast Switching Speed: The STW24N60M2 is designed for fast switching applications, which is crucial for minimizing switching losses in high-frequency operations.

6. Thermal Performance: The device has a maximum junction temperature (T_j) of 150 degrees Celsius, allowing it to operate in demanding thermal environments. It also features a robust thermal resistance, ensuring effective heat dissipation.

7. Package Type: The MOSFET is typically available in a TO-220 package, which provides good thermal performance and ease of mounting on heatsinks for enhanced cooling.

8. Applications: The STW24N60M2 is suitable for a variety of applications, including:

   • Power supplies
   • Motor control
   • Lighting control
   • DC-DC converters
   • Inverters for renewable energy systems

Electrical Characteristics:

• Maximum Drain-Source Voltage (V_DS): 600V
• Continuous Drain Current (I_D): 24A
• Pulsed Drain Current (I_D, pulsed): 80A
• Gate-Source Voltage (V_GS): ±20V
• Total Gate Charge (Q_g): Approximately 60 nC at V_GS = 10V
• Input Capacitance (C_iss): Around 1,200 pF

Conclusion:

The STW24N60M2 is a versatile and efficient N-channel MOSFET that is well-suited for high-voltage and high-current applications. Its combination of low on-resistance, fast switching capabilities, and robust thermal performance makes it an excellent choice for engineers looking to design reliable and efficient power electronic systems.