STW35N60DM2

The STW35N60DM2 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in various applications, including power management, motor control, and switching power supplies. Here’s a detailed description of its key features and specifications:

Key Features:

1. Voltage Rating: The STW35N60DM2 has a maximum drain-source voltage (V_DS) of 600 volts, making it suitable for high-voltage applications.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 35 amperes, which allows it to manage significant power loads effectively.

3. R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.035 ohms at a gate-source voltage (V_GS) of 10 volts. This low on-resistance contributes to reduced power losses and improved efficiency during operation.

4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2 to 4 volts, which allows for easy driving with standard logic levels.

5. Fast Switching: The device is designed for fast switching applications, with a total gate charge (Q_g) of approximately 67 nC at V_GS = 10V. This characteristic is beneficial for applications requiring rapid on/off switching.

6. Thermal Performance: The STW35N60DM2 features a robust thermal performance with a maximum junction temperature (T_j) of 150°C. It is packaged in a TO-220 form factor, which aids in effective heat dissipation.

7. Body Diode: The MOSFET includes an intrinsic body diode, which allows for reverse conduction. This feature is useful in applications like synchronous rectification.

8. Applications: It is commonly used in power supplies, motor drivers, and other high-efficiency power conversion applications. Its high voltage and current ratings make it suitable for industrial and automotive applications as well.

Package Information:

• Type: TO-220
• Dimensions: The TO-220 package typically has a standard footprint, making it easy to integrate into various PCB designs.
• Pin Configuration: The device has three pins: Gate (G), Drain (D), and Source (S), allowing for straightforward connections in circuit designs.

Conclusion:

The STW35N60DM2 from STMicroelectronics is a versatile and efficient N-channel MOSFET that offers high voltage and current handling capabilities, low on-resistance, and fast switching speeds. Its robust design and thermal performance make it an excellent choice for a wide range of power management applications.