STW65N65DM2AG

The STW65N65DM2AG is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in various applications, including power management, motor control, and switching power supplies, due to its excellent efficiency and thermal performance.

Key Features:

1. Voltage Rating: The STW65N65DM2AG has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.

2. Current Rating: It can handle a continuous drain current (I_D) of up to 65A, which allows it to manage significant power loads effectively.

3. R_DS(on): The on-resistance (R_DS(on)) is exceptionally low, typically around 0.14 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power losses during operation, enhancing overall efficiency.

4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which allows for easy driving with standard logic levels.

5. Thermal Performance: The device features a high maximum junction temperature (T_J) of 150°C, which provides robustness in demanding thermal environments. It also has a low thermal resistance, allowing for effective heat dissipation.

6. Package Type: The STW65N65DM2AG is typically available in a TO-220 package, which is designed for easy mounting on heatsinks, facilitating better thermal management.

7. Fast Switching: The MOSFET is optimized for fast switching applications, which is crucial for reducing switching losses in high-frequency circuits.

8. Applications: Common applications include power supplies, converters, inverters, and motor drivers, where high efficiency and reliability are paramount.

Electrical Characteristics:

• Maximum Drain-Source Voltage (V_DS): 650V
• Continuous Drain Current (I_D): 65A
• Pulsed Drain Current (I_D,pulse): 150A
• Gate-Source Voltage (V_GS): ±20V
• Total Gate Charge (Q_g): Approximately 60 nC, which contributes to its fast switching capabilities.

Conclusion:

The STW65N65DM2AG is a robust and efficient N-channel MOSFET that is well-suited for high-voltage and high-current applications. Its low on-resistance, high thermal performance, and fast switching characteristics make it an ideal choice for engineers looking to design reliable and efficient power electronic systems.