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STW70N60M2

  • In Stock: 115847
  • Available: 5779

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $3.41000US $3.41
10+US $3.06900US $30.69
30+US $2.38700US $71.61
100+US $1.96075US $196.08
500+US $1.87550US $937.75
1000+US $1.70500US $1705.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    STMicroelectronics
  • Manufacturer's Part No.
    STW70N60M2
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    MDmesh™ II Plus
  • ECCN
    EAR99
  • Mount
    Through Hole
  • Weight
    38.000013g
  • FET Type
    N-Channel
  • Lead Free
    Lead Free
  • Packaging
    Tube
  • Rise Time
    17ns
  • Vgs (Max)
    ±25V
  • Technology
    MOSFET (Metal Oxide)
  • Part Status
    Active
  • Subcategory
    FET General Purpose Powers
  • REACH Status
    REACH Unaffected
  • Mounting Type
    Through Hole
  • Number of Pins
    3
  • Operating Mode
    ENHANCEMENT MODE
  • Package / Case
    TO-247-3
  • Contact Plating
    Tin
  • Fall Time (Typ)
    9 ns
  • Base Part Number
    STW70N
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    16 Weeks
  • Power Dissipation
    450W
  • Threshold Voltage
    3V
  • Number of Channels
    1
  • Number of Elements
    1
  • Turn On Delay Time
    32 ns
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Radiation Hardening
    No
  • Turn-Off Delay Time
    155 ns
  • Element Configuration
    Single
  • Operating Temperature
    -55°C~150°C TJ
  • Power Dissipation-Max
    450W Tc
  • Number of Terminations
    3
  • Rds On (Max) @ Id, Vgs
    40m Ω @ 34A, 10V
  • Transistor Application
    SWITCHING
  • DS Breakdown Voltage-Min
    600V
  • Transistor Element Material
    SILICON
  • Gate Charge (Qg) (Max) @ Vgs
    118nC @ 10V
  • Gate to Source Voltage (Vgs)
    25V
  • Avalanche Energy Rating (Eas)
    9000 mJ
  • Continuous Drain Current (ID)
    68A
  • Drain to Source Voltage (Vdss)
    600V
  • Drain-source On Resistance-Max
    0.04Ohm
  • Pulsed Drain Current-Max (IDM)
    272A
  • Input Capacitance (Ciss) (Max) @ Vds
    5200pF @ 100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Current - Continuous Drain (Id) @ 25°C
    68A Tc

Environmental & Export Classifications

  • HTSUS
    8541.29.0095
  • ECCN Code
    EAR99
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)

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