SUD09P10-195-GE3

The SUD09P10-195-GE3 is a PowerPAK® SO-8 power MOSFET manufactured by Vishay, designed for high-efficiency power management applications in electronic circuits. This MOSFET features a P-channel enhancement mode design, offering low on-state resistance (RDS(on)) and high current handling capability. With a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) rating of 9A, the SUD09P10-195-GE3 is suitable for various power switching and voltage regulation tasks. Its compact PowerPAK® SO-8 package offers efficient thermal performance and space-saving benefits. The MOSFET operates reliably over a wide temperature range and is ideal for use in applications such as power supplies, motor control, and load switches.

Specifications:

• Type: Power MOSFET (P-Channel Enhancement Mode)
• Drain-Source Voltage (VDS): 100V
• Continuous Drain Current (ID): 9A
• On-State Resistance (RDS(on)): 195mΩ (max) at VGS = -10V, ID = -4.5A
• Gate-Source Voltage (VGS) (Max): ±20V
• Operating Temperature Range: -55°C to +150°C
• Package: PowerPAK® SO-8

Features:

• High Efficiency: Low on-state resistance (RDS(on)) minimizes power loss and enhances efficiency in power management applications.
• High Current Handling: Capable of handling continuous drain currents up to 9A, suitable for high-power applications.
• Compact Package: PowerPAK® SO-8 package offers efficient thermal performance and space-saving benefits.
• Enhancement Mode Design: Simplifies circuit design and ensures easy control of the MOSFET.
• Wide Temperature Range: Operates reliably in extreme temperature conditions, suitable for diverse environments and applications.
• RoHS Compliant: Manufactured in compliance with RoHS directives, ensuring environmental responsibility.

Applications:

• Power Supplies
• Motor Control
• Load Switches
• DC-DC Converters
• Battery Management Systems