SUM110P04-05-E3

The SUM110P04-05-E3 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This component is designed for various applications, including power management, switching, and amplification in electronic circuits.

Key Features:

1. Type: N-channel MOSFET
2. Package: The SUM110P04-05-E3 is typically housed in a TO-220 package, which provides excellent thermal performance and allows for easy mounting on heat sinks.
3. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for low to medium voltage applications.
4. Current Rating: The device can handle a continuous drain current (I_D) of up to 110A, which is significant for high-power applications.
5. R_DS(on): The on-resistance (R_DS(on)) is low, typically around 5 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.
6. Gate Threshold Voltage (V_GS(th)): The threshold voltage is in the range of 2V to 4V, allowing for effective switching with lower gate drive voltages.
7. Thermal Resistance: The thermal resistance from junction to case (RθJC) is low, which helps in managing heat dissipation effectively during operation.
8. Switching Speed: The SUM110P04-05-E3 features fast switching capabilities, making it suitable for high-frequency applications.

Applications:

• Power Supply Circuits: Ideal for use in DC-DC converters and power management systems.
• Motor Control: Can be used in motor driver circuits for efficient control of electric motors.
• Load Switching: Suitable for switching applications where high current loads need to be controlled.
• Amplification: Can be utilized in audio amplifiers and RF amplifiers due to its high gain characteristics.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): ±20V
• Maximum Power Dissipation (P_D): Typically around 94W, depending on the thermal management.
• Body Diode Characteristics: The device includes an intrinsic body diode, which can conduct in reverse bias, making it useful in applications requiring flyback protection.

Reliability:

Vishay is known for its commitment to quality and reliability, and the SUM110P04-05-E3 is no exception. It is designed to meet stringent industry standards, ensuring long-term performance in demanding environments.

Conclusion:

The SUM110P04-05-E3 from Vishay is a robust and efficient N-channel MOSFET suitable for a wide range of applications. Its high current handling, low on-resistance, and fast switching capabilities make it an excellent choice for engineers looking to optimize power management and switching performance in their designs.