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SUM110P06-07L-E3

  • In Stock: 49844
  • Available: 47291
  • Updated: 16 HRS ago

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.59080US $2.59
10+US $2.33172US $23.32
30+US $1.81356US $54.41
100+US $1.48971US $148.97
500+US $1.42494US $712.47
1000+US $1.29540US $1295.40

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

Quick RFQ

Product Parameter

  • Manufacturer
    Vishay
  • Manufacturer's Part No.
    SUM110P06-07L-E3
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Single
  • Series
    TrenchFET®
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Package / Case
    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Part Status
    Active
  • Operating Temperature
    -55°C~175°C TJ
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Number of Pins
    3
  • Packaging
    Cut Tape (CT)
  • Subcategory
    Other Transistors
  • Number of Terminations
    2
  • Terminal Finish
    Matte Tin (Sn)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Pin Count
    4
  • Number of Elements
    1
  • Lead Free
    Lead Free
  • Radiation Hardening
    No
  • Pbfree Code
    yes
  • Height
    5.08mm
  • Length
    10.41mm
  • Width
    9.65mm
  • Weight
    1.946308g
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Element Configuration
    Single
  • Transistor Application
    SWITCHING
  • Power Dissipation
    3.75W
  • Max Junction Temperature (Tj)
    175°C
  • Number of Channels
    1
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    3.75W Ta 375W Tc
  • Turn On Delay Time
    20 ns
  • Turn-Off Delay Time
    110 ns
  • Operating Mode
    ENHANCEMENT MODE
  • Pulsed Drain Current-Max (IDM)
    240A
  • Drain to Source Voltage (Vdss)
    60V
  • Continuous Drain Current (ID)
    -11A
  • Resistance
    6.9MOhm
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -60V
  • Threshold Voltage
    -3V
  • FET Type
    P-Channel
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    11400pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    345nC @ 10V
  • Vgs (Max)
    ±20V
  • Rise Time
    160ns
  • Fall Time (Typ)
    240 ns
  • Nominal Vgs
    -3 V
  • Current - Continuous Drain (Id) @ 25°C
    110A Tc
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Rds On (Max) @ Id, Vgs
    6.9m Ω @ 30A, 10V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e3
  • REACH SVHC
    No SVHC
  • JESD-30 Code
    R-PSSO-G2

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  • Delivery Time

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