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TIP147

  • In Stock: 25000
  • Available: 39129

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.06400US $2.06
10+US $1.37600US $13.76
30+US $1.03200US $30.96
100+US $0.82560US $82.56
500+US $0.75680US $378.40
1000+US $0.68800US $688.00

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Quick RFQ
  • Description
  • Alternatives
  • Shopping Guide
Description

The TIP147 is a high-performance, high-voltage, NPN power transistor manufactured by STMicroelectronics. It is designed for a variety of applications, including power switching and amplification in industrial and consumer electronics.

Key Features:

  1. Type: NPN Bipolar Junction Transistor (BJT)
  2. Package: Typically available in a TO-220 package, which allows for efficient heat dissipation and easy mounting on heatsinks.
  3. Voltage Rating: The TIP147 can handle a maximum collector-emitter voltage (Vce) of up to 120V, making it suitable for high-voltage applications.
  4. Current Rating: It has a maximum continuous collector current (Ic) rating of around 8A, allowing it to drive significant loads.
  5. Power Dissipation: The transistor can dissipate power up to 65W, depending on the thermal management and ambient conditions.
  6. Gain: The TIP147 features a high current gain (hFE), typically ranging from 20 to 150, which enhances its efficiency in amplification applications.
  7. Switching Speed: While not as fast as modern MOSFETs, the TIP147 offers reasonable switching speeds for many applications, making it suitable for use in linear and switching power supplies.

Applications:

  • Power Amplifiers: Used in audio and RF applications where high power and linearity are required.
  • Switching Regulators: Employed in power supply circuits to switch loads on and off efficiently.
  • Motor Control: Suitable for driving DC motors in various applications, including robotics and industrial machinery.
  • Relay Drivers: Can be used to control relays in automation systems.

Electrical Characteristics:

  • Collector-Emitter Breakdown Voltage (V(BR)CEO): Typically around 120V.
  • Emitter-Base Breakdown Voltage (V(BR)EBO): Generally around 5V.
  • Thermal Resistance: The thermal resistance from junction to case is low, allowing for effective heat management.

Thermal and Mechanical Considerations:

  • The TO-220 package design allows for easy attachment to heatsinks, which is crucial for maintaining operational stability under high load conditions.
  • The transistor's construction includes a silicon die that is encapsulated in a durable plastic housing, providing protection against environmental factors.

Conclusion:

The TIP147 from STMicroelectronics is a robust and versatile power transistor that is well-suited for a wide range of applications requiring high voltage and current handling capabilities. Its combination of high power dissipation, good thermal performance, and reliable operation makes it a popular choice among engineers and designers in the electronics industry.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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