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TIP42C

  • In Stock: 115966
  • Available: 7720

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.02267US $1.02
10+US $0.68178US $6.82
30+US $0.51134US $15.34
100+US $0.40907US $40.91
500+US $0.37498US $187.49
1000+US $0.34089US $340.89

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Changjiang Electronics
  • Manufacturer's Part No.
    TIP42C
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Single
  • Series
  • Part Status
    Obsolete
  • Transistor Type
    PNP
  • Current - Collector (Ic) (Max)
    6A
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 600mA, 6A
  • Current - Collector Cutoff (Max)
    700μA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    15 @ 3A 4V
  • Power - Max
    2W
  • Frequency - Transition
    3MHz
  • Operating Temperature
    150°C TJ
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Supplier Device Package
  • Factory Lead Time
  • Lifecycle Status
  • Surface Mount
    NO
  • Number of Pins
  • Transistor Element Material
    SILICON
  • Packaging
    Tube
  • Published
  • Pbfree Code
    yes
  • Number of Terminations
    3
  • Terminal Finish
    MATTE TIN
  • Max Power Dissipation
  • Terminal Position
    SINGLE
  • Terminal Form
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Number of Elements
    1
  • Polarity
  • Case Connection
  • Transistor Application
    SWITCHING
  • Halogen Free
  • Collector Emitter Voltage (VCEO)
  • Max Collector Current
  • Collector Emitter Breakdown Voltage
  • Lead Free
  • Subcategory
  • Frequency
  • Base Part Number
  • Element Configuration
  • Power Dissipation
  • Gain Bandwidth Product
  • Polarity/Channel Type
    PNP
  • Transition Frequency
    3MHz
  • Collector Emitter Saturation Voltage
  • Collector Base Voltage (VCBO)
  • Emitter Base Voltage (VEBO)
  • hFE Min
  • Radiation Hardening
  • Voltage - Rated DC
  • Current Rating
  • Qualification Status
    COMMERCIAL
  • Max Breakdown Voltage
  • Mount
  • Configuration
    SINGLE
  • JEDEC-95 Code
    TO-220AB
  • Contact Plating
  • Weight
  • Height
  • Length
  • Width
  • Termination
  • Collector Current-Max (IC)
  • DC Current Gain-Min (hFE)
  • Collector-Emitter Voltage-Max
  • HTS Code
  • Number of Terminals
  • Max Operating Temperature
  • Turn Off Time-Max (toff)
  • Turn On Time-Max (ton)
  • Voltage
  • Current
  • Continuous Collector Current
  • Power Rating
  • Type
  • Noise Figure
  • Min Operating Temperature
  • Additional Feature
  • Reference Standard
  • Max Frequency
  • VCEsat-Max
  • Fall Time-Max (tf)
  • Max Junction Temperature (Tj)
  • Mfr
  • Operating Temperature (Max)
  • Highest Frequency Band
  • Collector-Base Capacitance-Max
  • Power Dissipation-Max (Abs)
  • Isolation Voltage
  • Saturation Current
  • Number of Channels
  • Hold Current
  • Manufacturer Package Identifier
  • Output Voltage
  • Rise Time-Max
  • Turn On Delay Time
  • Turn-Off Delay Time
  • Gate to Source Voltage (Vgs)
  • Continuous Drain Current (ID)
  • Drain to Source Breakdown Voltage
  • Output Power
  • Number of Bits
  • Power Dissipation Ambient-Max
  • Material
  • Diameter
  • Thickness
  • Max Supply Voltage
  • Output Current
  • Propagation Delay
  • Input Current
  • Operating Temperature (Min)
  • Breakdown Voltage
  • Input Capacitance
  • Drain to Source Voltage (Vdss)
  • Threshold Voltage
  • Drain to Source Resistance
  • k Reflow Temperature-Max (s)
  • Size
  • Product Category
  • Ambient Temperature Range High
  • Power Dissipation-Max
  • Max Output Current
  • Trim/Adjustable Output
  • Analog IC - Other Type
  • Max Output Voltage
  • Min Input Voltage
  • Max Input Voltage
  • Reference Type
  • Min Output Voltage
  • Family
  • Voltage Rating
  • Technology
  • FET Type
  • Rds On (Max) @ Id, Vgs
  • Vgs(th) (Max) @ Id
  • Input Capacitance (Ciss) (Max) @ Vds
  • Current - Continuous Drain (Id) @ 25°C
  • Gate Charge (Qg) (Max) @ Vgs
  • Vgs (Max)
  • FET Feature
  • Input Type
  • Reverse Recovery Time
  • Test Condition
  • Vce(on) (Max) @ Vge, Ic
  • IGBT Type
  • Gate Charge
  • Current - Collector Pulsed (Icm)
  • Td (on/off) @ 25°C
  • Gate-Emitter Voltage-Max
  • Gate-Emitter Thr Voltage-Max
  • Switching Energy
  • Peak Reflow Temperature-Max (s)
  • T
  • Operating Mode
  • Drain Current-Max (Abs) (ID)
  • Drain-source On Resistance-Max
  • Pulsed Drain Current-Max (IDM)
  • DS Breakdown Voltage-Min
  • FET Technology
  • Resistor - Base (R1)
  • Resistor - Emitter Base (R2)
  • Time
  • Gain
  • Noise Figure (dB Typ @ f)
  • Input
  • NTC Thermistor
  • Input Capacitance (Cies) @ Vce
  • Forward Current
  • Max Repetitive Reverse Voltage (Vrrm)
  • Number of Functions
  • Supply Voltage
  • Terminal Pitch
  • Temperature Grade
  • Seated Height-Max
  • Telecom IC Type
  • Slew Rate
  • Amplifier Type
  • Neg Supply Voltage-Nom (Vsup)
  • Average Bias Current-Max (IIB)
  • Supply Voltage Limit-Max
  • -3db Bandwidth
  • Neg Supply Voltage-Max (Vsup)
  • Input Offset Voltage-Max
  • Output Current-Min
  • Power Supplies
  • Supply Current-Max (Isup)
  • Reverse Recovery Time (trr)

Environmental & Export Classifications

  • JESD-609 Code
    e3
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
  • RoHS Status
    ROHS3 Compliant
  • JESD-30 Code
    R-PSFM-T3
  • REACH SVHC

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