TPS1101DR
- Manufacturer's Part No.:TPS1101DR
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:-
- Description:MOSFET P-CH 15V 2.3A 8-SOIC
- Quantity:RFQAdd to RFQ List
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- Delivery:
- Available: 2500
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.97780 | US $2.98 |
10+ | US $1.98520 | US $19.85 |
30+ | US $1.48890 | US $44.67 |
100+ | US $1.19112 | US $119.11 |
500+ | US $1.09186 | US $545.93 |
1000+ | US $0.99260 | US $992.60 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
Product Parameter
- ManufacturerTexas
- Manufacturer's Part No.TPS1101DR
- CategoriesDiscrete Semiconductor Products
- Sub-CategoriesTransistors - FETs, MOSFETs - Single
- Series-
- ECCNEAR99
- MountSurface Mount
- Width3.91mm
- Height1.75mm
- Length4.9mm
- FET TypeP-Channel
- Lead FreeLead Free
- PackagingTape & Reel (TR)
- Pin Count8
- Rise Time5.5ns
- Thickness1.58mm
- Vgs (Max)+2V, -15V
- TechnologyMOSFET (Metal Oxide)
- Part StatusActive
- Pbfree Codeyes
- SubcategoryOther Transistors
- REACH StatusREACH Unaffected
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Mounting TypeSurface Mount
- Terminal FormGULL WING
- Number of Pins8
- Operating ModeENHANCEMENT MODE
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Case ConnectionISOLATED
- Fall Time (Typ)5.5 ns
- Terminal FinishNickel/Palladium/Gold (Ni/Pd/Au)
- Base Part NumberTPS1101
- Lifecycle StatusACTIVE (Last Updated: 1 day ago)
- Factory Lead Time6 Weeks
- Power Dissipation791mW
- Terminal PositionDUAL
- Additional FeatureLOGIC LEVEL COMPATIBLE, ESD PROTECTED
- Number of Elements1
- Turn On Delay Time6.5 ns
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Radiation HardeningNo
- Turn-Off Delay Time19 ns
- Operating Temperature-40°C~150°C TJ
- Power Dissipation-Max791mW Ta
- Number of Terminations8
- Rds On (Max) @ Id, Vgs90m Ω @ 2.5A, 10V
- Transistor ApplicationSWITCHING
- Transistor Element MaterialSILICON
- Drain Current-Max (Abs) (ID)0.62A
- Gate Charge (Qg) (Max) @ Vgs11.25nC @ 10V
- Gate to Source Voltage (Vgs)2V
- Continuous Drain Current (ID)2.3A
- Peak Reflow Temperature (Cel)260
- Drain to Source Breakdown Voltage15V
- Drive Voltage (Max Rds On,Min Rds On)2.7V 10V
- Current - Continuous Drain (Id) @ 25°C2.3A Ta
Environmental & Export Classifications
- HTSUS8541.29.0095
- ECCN CodeEAR99
- RoHS StatusROHS3 Compliant
- JESD-609 Codee4
- Moisture Sensitivity Level (MSL)1 (Unlimited)
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