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TPS1120D

  • Available: 39129

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $1.80000US $1.80
10+US $1.20000US $12.00
30+US $0.90000US $27.00
100+US $0.72000US $72.00
500+US $0.66000US $330.00
1000+US $0.60000US $600.00

Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.

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Product Parameter

  • Manufacturer
    Texas
  • Manufacturer's Part No.
    TPS1120D
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - FETs, MOSFETs - Arrays
  • Series
    -
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Part Status
    Active
  • Operating Temperature
    -40°C~150°C TJ
  • Factory Lead Time
    12 Weeks
  • Lifecycle Status
    ACTIVE (Last Updated: 5 days ago)
  • Mount
    Surface Mount
  • Number of Pins
    8
  • Packaging
    Tube
  • Subcategory
    Other Transistors
  • Base Part Number
    TPS1120
  • Number of Terminations
    8
  • Terminal Finish
    Nickel/Palladium/Gold (Ni/Pd/Au)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Pin Count
    8
  • Number of Elements
    2
  • Lead Free
    Lead Free
  • Radiation Hardening
    No
  • Pbfree Code
    yes
  • Current Rating
    -1.7A
  • Additional Feature
    LOGIC LEVEL COMPATIBLE, ESD PROTECTED
  • Voltage - Rated DC
    -15V
  • Height
    1.75mm
  • Length
    4.9mm
  • Width
    3.91mm
  • Max Power Dissipation
    840mW
  • Mounting Type
    Surface Mount
  • Transistor Element Material
    SILICON
  • Transistor Application
    SWITCHING
  • Power Dissipation
    840mW
  • Output Voltage
    -15V
  • Thickness
    1.58mm
  • Turn On Delay Time
    4.5 ns
  • Turn-Off Delay Time
    13 ns
  • Operating Mode
    ENHANCEMENT MODE
  • Drain-source On Resistance-Max
    0.4Ohm
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • Continuous Drain Current (ID)
    1.17A
  • Gate to Source Voltage (Vgs)
    2V
  • Drain to Source Breakdown Voltage
    15V
  • Threshold Voltage
    -1.25V
  • FET Type
    2 P-Channel (Dual)
  • Vgs(th) (Max) @ Id
    1.5V @ 250μA
  • Gate Charge (Qg) (Max) @ Vgs
    5.45nC @ 10V
  • FET Feature
    Logic Level Gate
  • Rise Time
    10ns
  • Fall Time (Typ)
    10 ns
  • Rds On (Max) @ Id, Vgs
    180m Ω @ 1.5A, 10V

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • RoHS Status
    ROHS3 Compliant
  • JESD-609 Code
    e4
  • REACH SVHC
    No SVHC

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