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TPS28226DRBTG4

  • In Stock: 92616
  • Available: 10

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $2.01952US $2.02
10+US $1.81757US $18.18
30+US $1.41366US $42.41
100+US $1.16122US $116.12
500+US $1.11074US $555.37
1000+US $1.00976US $1009.76

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  • Description
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Description
TPS28226DRBTG4 Description Is the TPS28226DRBTG4 gate driver required for a MOSFET?
The TPS28226DRBTG4 gate driver is typically required for a MOSFET to perform the on/off operation at the desired frequency. This MOSFETs require a gate drive circuit to convert the on/off signals from an analog or digital controller into the power signals needed to control the MOSFET at high frequencies. So people need gate drivers for MOSFET. TPS28226DRBTG4
Features
• Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
• Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
• Wide Power System Train Input Voltage: 3 V Up to 27 V
• Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude 
• Capable to Drive MOSFETs with ≥40-A Current per Phase 
• High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW
– 2MHz
• Capable to Propagate <30-ns Input PWM Pulses
• Low-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current
• 3-State PWM Input for Power Stage Shutdown 
• Space Saving Enable (Input) and Power Good Signals on Same Pin 

Thermal Shutdown
• UVLO Protection
• Internal Bootstrap Diode
• Economical SOIC-8 and
Thermally Enhanced 3-mm x 3-mm DFN-8 Packages  
• High Performance Replacement for Popular 3-State Input Drivers TPS28226DRBTG4 Applications
• Multi-Phase DC-to-DC Converters with Analog or Digital Control
• Desktop and Server VRMs and EVRDs 
• Portable and Notebook Regulators
• Synchronous Rectification for Isolated Power Supplies
Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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