TPW4R50ANH,L1Q
- Manufacturer's Part No.:TPW4R50ANH,L1Q
- Manufacturer:
- Categories:
- Sub-Categories:
- Series:U-MOSVIII-H
- Description:MOSFET N-CH 100V 92A 8DSOP
- Datasheet:
- Quantity:RFQAdd to RFQ List
- Payment:
- Delivery:
- Available: 10000
Reference Price(In US Dollars)
Qty | Unit Price | Ext.Price |
---|---|---|
1+ | US $2.68000 | US $2.68 |
10+ | US $2.41200 | US $24.12 |
30+ | US $1.87600 | US $56.28 |
100+ | US $1.54100 | US $154.10 |
500+ | US $1.47400 | US $737.00 |
1000+ | US $1.34000 | US $1340.00 |
Do you want a lower wholesale price? Please send us an inquiry, and we will respond immediately.
- Description
- Alternatives
- Shopping Guide
The TPW4R50ANH, L1Q is a specific model of a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Toshiba. This component is designed for high-efficiency power management applications, making it suitable for various electronic devices and systems.
Key Features:
-
Type: N-channel MOSFET
- The N-channel configuration allows for efficient switching and amplification of electrical signals, making it ideal for power applications.
-
Voltage Rating:
- The TPW4R50ANH is rated for a maximum drain-source voltage (V_DS) of approximately 50V. This allows it to handle a wide range of voltage applications without risk of breakdown.
-
Current Rating:
- It can handle a continuous drain current (I_D) of around 4A, which is suitable for moderate power applications. The current rating may vary based on the thermal conditions and the specific application.
-
R_DS(on):
- The on-resistance (R_DS(on)) is typically low, which minimizes power loss during operation. This characteristic is crucial for enhancing the efficiency of power conversion circuits.
-
Package Type:
- The TPW4R50ANH is usually housed in a compact surface-mount package, which facilitates easy integration into printed circuit boards (PCBs) and helps save space in electronic designs.
-
Thermal Characteristics:
- The device is designed to operate efficiently at elevated temperatures, with a specified maximum junction temperature (T_j) that allows for reliable performance in various thermal environments.
-
Switching Speed:
- The MOSFET features fast switching capabilities, making it suitable for applications such as DC-DC converters, motor drivers, and other power management circuits where rapid on/off switching is required.
-
Gate Threshold Voltage:
- The gate threshold voltage (V_GS(th)) is designed to be low, allowing the device to be driven by standard logic levels, which simplifies the control circuitry.
Applications:
- Power Supply Circuits: Used in switching power supplies and voltage regulators.
- Motor Control: Suitable for driving DC motors and other inductive loads.
- LED Drivers: Can be used in circuits designed to drive LED lighting systems.
- Battery Management Systems: Ideal for applications in battery charging and protection circuits.
Conclusion:
The TPW4R50ANH, L1Q from Toshiba is a versatile and efficient power MOSFET that is well-suited for a variety of electronic applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it a reliable choice for engineers looking to optimize power management in their designs.
Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.
SHIPPING GUIDE
Shipping Methods
Rest assured that your orders will be handled by these trusted providers, such as DHL, FedEx, SF, and UPS.
Shipping Cost
Shipping starts at $40 but varies for destinations like South Africa, Brazil, India, and more. The actual shipping charges depend on time zone, country, and package weight/volume.
Delivery Time
We ship orders once daily, around 5 p.m., except on Sundays. The estimated delivery time may vary depending on the courier service you choose, but typically ranges from 5 to 7 business days.
Professional Platform
Full-speed Delivery
Wide Variety of Products
365 Days of Quality Assurance