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UCC5310MCDR

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    UCC5310MCDR
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    DGTL ISO 3KV 1CH GATE DRVR 8SOIC
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  • In Stock: 30000
  • Available: 86485

Reference Price(In US Dollars)

QtyUnit PriceExt.Price
1+US $98.93200US $98.93
10+US $74.19900US $741.99
30+US $64.30580US $1929.17
100+US $56.88590US $5688.59
500+US $53.42328US $26711.64
1000+US $49.46600US $49466.00

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Description

The UCC5310MCDR is a high-performance gate driver IC manufactured by Texas Instruments, designed for driving high-side and low-side MOSFETs in various power management applications. This device is particularly well-suited for use in half-bridge configurations, making it ideal for applications such as motor drives, power converters, and other high-frequency switching applications.

Key Features:

  1. Dual Channel Output: The UCC5310MCDR features two independent gate driver outputs, allowing it to control both high-side and low-side MOSFETs in a half-bridge configuration. This dual-channel capability enhances flexibility in circuit design.

  2. High Drive Capability: The IC is capable of sourcing and sinking high peak currents, typically around 2 A, which is essential for rapidly charging and discharging the gate capacitance of power MOSFETs. This feature helps to minimize switching losses and improve overall efficiency.

  3. Wide Supply Voltage Range: The UCC5310MCDR operates over a wide supply voltage range, typically from 10 V to 20 V, making it compatible with various power supply designs.

  4. Fast Switching Speeds: The device is designed for fast switching, with rise and fall times in the nanosecond range. This characteristic is crucial for high-frequency applications, as it reduces the time the MOSFETs spend in the linear region, thereby minimizing heat generation.

  5. Integrated Bootstrap Circuit: The UCC5310MCDR includes an integrated bootstrap circuit, which simplifies the design of high-side drivers by allowing the high-side MOSFET to be driven from the same supply voltage as the low-side MOSFET.

  6. Protection Features: The IC incorporates several protection features, including under-voltage lockout (UVLO) for both the high-side and low-side drivers. This ensures that the MOSFETs are not driven when the supply voltage is insufficient, preventing potential damage.

  7. Thermal Performance: The UCC5310MCDR is housed in a compact, thermally efficient package, typically a VQFN (Very Thin Quad Flat No-lead) or similar, which aids in heat dissipation and allows for a smaller PCB footprint.

  8. Logic Level Compatibility: The gate driver is compatible with standard logic levels, making it easy to interface with microcontrollers and digital signal processors.

Applications:

  • Motor Drives: Ideal for driving brushless DC motors and other types of electric motors.
  • Power Converters: Suitable for use in DC-DC converters, inverters, and other power conversion applications.
  • Class D Amplifiers: Can be used in audio amplification systems that require efficient switching.
  • Industrial Automation: Useful in various industrial applications where precise control of power devices is necessary.

Conclusion:

The UCC5310MCDR from Texas Instruments is a versatile and efficient gate driver IC that provides robust performance for driving high-side and low-side MOSFETs in demanding applications. Its combination of high drive capability, fast switching speeds, and integrated protection features makes it an excellent choice for engineers looking to enhance the performance and reliability of their power management designs.

Alternatives

Functional Equivalent (FE) materials, including Fused Filament Fabrication (FFF) form, assembly, and functionally compatible substitute materials.

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