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ULN2003APG,CN

  • In Stock: 11287
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Product Parameter

  • Manufacturer
    Toshiba
  • Manufacturer's Part No.
    ULN2003APG,CN
  • Categories
    Discrete Semiconductor Products
  • Sub-Categories
    Transistors - Bipolar (BJT) - Arrays
  • Series
    -
  • Package / Case
    16-DIP (0.300, 7.62mm)
  • Part Status
    Obsolete
  • Operating Temperature
    -40°C~85°C TA
  • Mount
    Through Hole
  • Packaging
    Tube
  • Base Part Number
    ULN200*A
  • Published
    2011
  • Max Power Dissipation
    1.47W
  • Transistor Type
    7 NPN Darlington
  • Current - Collector Cutoff (Max)
    50μA
  • Power - Max
    1.47W
  • Mounting Type
    Through Hole
  • Collector Emitter Voltage (VCEO)
    1.6V
  • Max Collector Current
    500mA
  • Collector Emitter Breakdown Voltage
    50V
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    1000 @ 350mA 2V
  • Vce Saturation (Max) @ Ib, Ic
    1.6V @ 500μA, 350mA

Environmental & Export Classifications

  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • RoHS Status
    RoHS Compliant

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